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參數(shù)資料
| 型號： | MRF3010 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | LATERAL N-CHANNEL BROADBAND RF POWER MOSFET |
| 中文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 106K |
| 代理商： | MRF3010 |
7
MRF3010
MOTOROLA RF DEVICE DATA
Figure 6. 1.6 GHz Test Circuit Layout
VGG
INPUT
INPUT
C1
C2
C3
1.71
″
C12
C7
C8
OUTPUT
VDD
INPUT
C5
C4
R1
R2
C6
L1
R4
(NOTE 1)
L2
C9
C10 C11
R3
L3
C13
(NOTE 2)
–
+
R1
R2
R3
R4
1 k
, 1/4 W Resistor
220
, 1/4 W Resistor
10 k
, 2 W Resistor
10 k
, 1/8 W Resistor
C1, C6, C10, C12
C2, C3, C7, C8
C4, C11
C5, C9
C13
L1
L2
L3
24 pF, “A” Chip Capacitor, ATC
0.8–8.0 pF, Variable Capacitor, Johansen Gigatrim
240 pF, “A” Chip Capacitor, ATC
0.1
μ
F, Ceramic Capacitor
50
μ
F, 50 V, Electrolytic Capacitor
VK200
2 Turns, 0.175
′′
ID, 20 AWG, Close Wound
10 Turns, 20 AWG, Close Wound
NOTES:
(1) L1 is gate input from Endplate
(2) L3 is wrapped around R3
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