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參數(shù)資料
| 型號： | MRF19085LSR3 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF Power Field Effect Transistors |
| 中文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-780S, CASE 465A-06, 2 PIN |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 584K |
| 代理商： | MRF19085LSR3 |
7
MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
33
34
35
36
37
38
39
32
31
30
29
28
27
26
24.0
24.5
25.0
25.5
26.0
26.5
27.0
27.5
28.0
V
DD
, DRAIN SUPPLY (V)
Figure 9. Two-Tone Intermodulation Distortion and
Drain Efficiency versus Drain Supply
I
I
,
η
η
I
DQ
= 850 mA
f = 1960 MHz
100 kHz Tone Spacing
IMD
P
out
, OUTPUT POWER (WATTS)
Gp
11.5
12.0
12.5
13.0
13.5
14.0
10
100
4
Figure 10. Two-Tone Power Gain versus Output
Power
Figure 11. Two-Tone Broadband Performance
10
15
20
25
30
35
40
35
30
25
20
15
10
5
1920
1930
1940
1950
1960
1970
1980
1990
2000
V
DD
= 26 Vdc
f = 1960 MHz
100 kHz Tone Spacing
I
DQ
= 1150 mA
1000 mA
850 mA
700 mA
550 mA
Gp
η
η
IMD
I
I
f, FREQUENCY (MHz)
I
I
IRL
G
ps
V
DD
= 26 Vdc
P
out
= 90 W (PEP)
I
DQ
= 850 mA
100 kHz Tone Spacing
F
Freescale Semiconductor, Inc.
n
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF19085 | CHOPPER STABILIZED LATCH W/TIN PLATING |
| MRF19085LR3 | CHOPPER STABILIZED LATCH W/TIN PLATING |
| MRF19085R3 | RF Power Field Effect Transistors |
| MRF19085SR3 | CONN, 10-PIN HDR, SMT |
| MRF19090S | RF MOSFET(射頻MOS場效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF19085R3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF19085SR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF19090 | 制造商:Motorola Inc 功能描述: |
| MRF19090R3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF19090S | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391B |
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