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參數(shù)資料
| 型號： | MRF18090AS |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF Power MOSFETs(RF功率MOS場效應(yīng)管) |
| 中文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-880S, CASE 465C-02, 3 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 155K |
| 代理商： | MRF18090AS |
5
MRF18090A MRF18090AS
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
1 W
Pin = 3.65 W
Figure 5. Power Gain versus
Output Power
Pout, OUTPUT POWER (WATTS)
10
Figure 6. Output Power versus Supply Voltage
0
VDD, SUPPLY VOLTAGE (VOLTS)
120
40
G
12
0.1
o
Figure 7. Output Power versus Frequency
100
f, FREQUENCY (GHz)
0
Figure 8. Output Power and Efficiency
versus Input Power
Pin, INPUT POWER (WATTS)
20
1.795
0
15
1
120
20
30
20
1.895
60
100
30
22
50
40
10
η
,
0
2
1.815
Figure 9. Wideband Gain and IRL
(at Small Signal)
15
f, FREQUENCY (MHz)
6
1.75
12
1.95
1.85
1.80
1.90
10
13
16
14
500 mA
300 mA
750 mA
IDQ = 1000 mA
26
1.835
3
4
5
60
50
30
10
0
VDD = 26 Vdc
f = 1880 MHz
11
12
28
20
24
80
,
2 W
Pin = 3.65 W
IDQ = 750 mA
f = 1880 MHz
1 W
o
,
1.855
1.875
60
80
70
VDD = 26 Vdc
IDQ = 750 mA
2 W
60
40
80
100
o
,
20
Pout
VDD = 26 Vdc
IDQ = 750 mA
f = 1880 MHz
G
0
–15
–25
–30
–20
–5
–10
VDD = 26 Vdc
IDQ = 750 mA
40
9
I
1.0
18
32
16
14
100
90
IRL
Gps
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| MRF18090BS | RF Power MOSFETs(RF功率MOS場效應(yīng)管) |
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| MRF184 | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF18090B | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF18090BR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF18090BS | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF18090BSR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF181S | 制造商:MOTOROLA 功能描述:SHELF STOCK |
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