參數(shù)資料
型號: MRF166C
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: RF Power FET(射頻功率場效應(yīng)管)
中文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CASE 319-07, 6 PIN
文件頁數(shù): 3/12頁
文件大小: 219K
代理商: MRF166C
3
MRF166C
MOTOROLA WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA
Figure 1. MRF166C 500 MHz Test Circuit
R2
R3
RFC2
RFC1
C11
+
+
Vdc
R1
RF
INPUT
DUT
Z2
Z4
C7
C6
RF
OUTPUT
VDD = 28 V
C4
C9
C8
C10
C5
BIAS
Z3
C1
C3
Z1
C2
C1, C7
C2, C6
C3
C4, C8
C5
C9, C10
C11
R1
R2
R3
RFC1
RFC2
Board Material
200 pF, Chip Capacitor
2–10 pF, Trimmer Capacitor, Johansen
27 pF, ATC 100 mil Chip Capacitor
0.1
μ
F, Chip Capacitor
15 pF, ATC 100 mil Chip Capacitor
680 pF, Feedthru Capacitor
50
μ
F, 50 V, Electrolytic Capacitor
120
, 1/2 W Resistor
10 k
, 1/2 W Resistor
1 k
, 1/2 W Resistor
Ferroxcube VK200 19/4B
10 Turns AWG #18, 0.125
I.D., Enameled
0.062
Teflon
Fiberglass
1 oz. Copper Clad Both Sides
ε
r = 2.56
350 mls
600 mls
C3
C2
C5
C6
825 mls
1650 mls
Z1
0.120
x 3.3
, Microstrip Line
Z2
0.120
x 2.1
, Microstrip Line
Z3, Z4
0.120
x 0.25
, Microstrip Line
TYPICAL CHARACTERISTICS
100
1
2
5
10
20
50
25
20
15
10
5
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
0
Coss
Ciss
Crss
VGS = 0 V
f = 1 MHz
Figure 2. Capacitance versus Drain–Source Voltage
C
100
10
0
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 3. DC Safe Operating Area
10
1
0.1
I
TC = 25
°
C
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