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參數(shù)資料
| 型號： | MRF1511T1 |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistor |
| 中文描述： | RF功率場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 477K |
| 代理商： | MRF1511T1 |
A
A
Replaced by MRF1511NT1. There are no form, fit or function changes with this part
replacement. N suffix added to part number to indicate transition to lead-free
terminations.
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
MRF1511T1
1
RF Device Data
Freescale Semiconductor
Designed for broadband commercial and industrial applications at frequen-
cies to 175 MHz. The high gain and broadband performance of this device
makes it ideal for large-signal, common source amplifier applications in 7.5 volt
portable FM equipment.
Specified Performance @ 175 MHz, 7.5 Volts
Output Power — 8 Watts
Power Gain — 11.5 dB
Efficiency — 55%
Capable of Handling 20:1 VSWR, @ 9.5 Vdc,
175 MHz, 2 dB Overdrive
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal
Impedance Parameters
Broadband UHF/VHF Demonstration Amplifier Information
Available Upon Request
RF Power Plastic Surface Mount Package
Available in Tape and Reel.
T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +40
Vdc
Gate-Source Voltage
V
GS
±
20
Vdc
Drain Current — Continuous
I
D
4
Adc
Total Device Dissipation @ T
C
= 25
°
C
(1)
Derate above 25
°
C
P
D
62.5
0.5
W
W/
°
C
Storage Temperature Range
T
stg
- 65 to +150
°
C
Operating Junction Temperature
T
J
150
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
2
°
C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
1
260
°
C
1. Calculated based on the formula P
D
=
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MRF1511
Rev. 4, 5/2006
Freescale Semiconductor
Technical Data
MRF1511T1
175 MHz, 8 W, 7.5 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466-03, STYLE 1
PLD-1.5
PLASTIC
G
D
S
TJ –TC
R
θ
JC
Freescale Semiconductor, Inc., 2006. All rights reserved.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF1513N | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1513NT1 | 功能描述:射頻MOSFET電源晶體管 RF LDMOS FET PLD1.5 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF1513NT1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1513NT1_0806 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF1513NT1-CUT TAPE | 制造商:Freescale 功能描述:MRF1513NT1 Series 520 MHz 3 W 12.5 V Lateral N-Ch Broadband RF Power Mosfet |
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