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參數(shù)資料
| 型號(hào)： | MR760 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | HIGH CURRENT LEAD MOUNTED SILICON RECTIFIERS 50-1000 VOLTS DIFFUSED JUNCTION |
| 中文描述： | 6 A, 1000 V, SILICON, RECTIFIER DIODE |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 188K |
| 代理商： | MR760 |
2
Rectifier Device Data
Figure 1. Forward Voltage
Figure 2. Maximum Surge Capability
Figure 3. Forward Voltage Temperature Coefficient
Figure 4. Typical Transient Thermal Resistance
1.8
2.4
0.6
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
700
500
20
50
10
i
5.0
2.0
1.0
1.2
0.8
1.0
1.4
1.6
2.0
2.2
2.6
7.0
100
70
0.2
0.5
0.7
200
30
3.0
0.3
300
MAXIMUM
TYPICAL
TJ = 25
°
C
NUMBER OF CYCLES AT 60 Hz
100
1.0
300
100
80
60
I
2.0
5.0
10
20
50
200
400
600
,
F
TJ = 175
°
C
25
°
C
VRRM MAY BE APPLIED BETWEEN
EACH CYCLE OF SURGE. THE TJ
NOTED IS TJ PRIOR TO SURGE
iF, INSTANTANEOUS FORWARD CURRENT (AMP)
1.0
0.2
+0.5
0
–0.5
–1.0
–1.5
–2.0
2.0
°
C
10
20
100
200
0.5
5.0
50
TYPICAL RANGE
t, TIME (SECONDS)
1.0
10
1.0
0.2
2.0
5.0
10
20
50
5.0
20
R
θ
3.0
2.0
0.5
0.3
0.1
0.2
0.3
0.5
0.7
3.0
30
7.0
70
Both leads to heat sink, with lengths as shown. Variations in RJL(t)
below 2.0 seconds are independent of lead connections of 1/8 inch
or greater, and vary only about
±
20% from the values shown. Values
for times greater than 2.0 seconds may be obtained by drawing a
curve, with the end point (at 70 seconds) taken from Figure 8, or
calculated from the notes, using the given curves as a guide. Either
typical or maximum values may be used. For RJL(t) values at pulse
widths less than 0.1 second, the above curve can be extrapolated
down to 10
μ
s at a continuing slope.
T
175
°
C
25
°
C
1/2”
3/8”
1/4”
1/8”
,
J
°
HEAT SINK
L
L
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