- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359660 > MR1S16AYS35 (飛思卡爾半導體(中國)有限公司) 64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM PDF資料下載
參數(shù)資料
| 型號： | MR1S16AYS35 |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | 64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| 中文描述： | 64K的x 16位的3.3V異步磁阻隨機存取內(nèi)存 |
| 文件頁數(shù)： | 9/20頁 |
| 文件大?。?/td> | 148K |
| 代理商： | MR1S16AYS35 |
Timing Specifications
MR0A16A Advanced Information Data Sheet, Rev. 0
Freescale Semiconductor
9
Write Mode
Table 10. Write Cycle Timing 1 (W Controlled)
1, 2, 3, 4, 5
Parameter
Symbol
t
AVAV
t
AVWL
t
AVWH
t
AVWH
t
WLWH
t
WLEH
t
WLWH
t
WLEH
t
DVWH
t
WHDX
t
WLQZ
t
WHQX
t
WHAX
Min
35
0
18
20
Max
—
—
—
—
Unit
ns
ns
ns
ns
Write cycle time
6
Address set-up time
Address valid to end of write (G high)
Address valid to end of write (G low)
Write pulse width (G high)
15
—
ns
Write pulse width (G low)
15
—
ns
Data valid to end of write
Data hold time
Write low to data Hi-Z
7, 8, 9
Write high to output active
7, 8, 9
Write recovery time
10
0
0
3
12
—
—
12
—
—
ns
ns
ns
ns
ns
NOTES:
1
A write occurs during the overlap of E low and W low.
Due to product sensitivities to noise, power supplies must be properly grounded and decoupled and
bus contention conditions must be minimized or eliminated during read and write cycles.
If G goes low at the same time or after W goes low, the output will remain in a high-impedance state.
After W, E, or UB/LB has been brought high, the signal must remain in steady-state high for a minimum
of 2 ns.
The minimum time between E being asserted low in one cycle to E being asserted low in a subsequent
cycle is the same as the minimum cycle time allowed for the device.
All write cycle timings are referenced from the last valid address to the first transition address.
This parameter is sampled and not 100% tested.
Transition is measured
±
200 mV from steady-state voltage.
At any given voltage or temperature, t
WLQZ
max < t
WHQX
min.
2
3
4
5
6
7
8
9
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MR2A08AYS35 | 64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MC68HC908JB12DW | This section updates data sheet information and introduces the 20-pin SOIC |
| MC68HC908JB12JDW | This section updates data sheet information and introduces the 20-pin SOIC |
| MC9S12DG128B | Device User Guide V01.09 |
| MC9S12DJ128B | Device User Guide V01.09 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MR2 | 制造商:NTI 功能描述:Minirator Analog Audio Signal Generator 制造商:NTI 功能描述:MINIRATOR PRECISION ANALOG AUDIO GENERATOR |
| MR-2 | 制造商:NEC 制造商全稱:NEC 功能描述:NEC TOKIN Sensors |
| MR2 MINIRATOR | 制造商:NTI 功能描述:SIGNAL GENERATOR AUDIO |
| MR2/420B 2UF/440VAC | 制造商:LCR CAPACITORS (EU) Ltd 功能描述:CAPACITOR 2UF 440VAC 制造商:LCR CAPACITORS (EU) Ltd 功能描述:CAPACITOR, 2UF, 440VAC 制造商:LCR CAPACITORS (EU) Ltd 功能描述:CAPACITOR, 2UF, 440VAC; Capacitance:2F; Capacitance Tolerance: 10%; Capacitor Dielectric Type:Polypropylene (PP); Voltage Rating:440VAC; Life Time @ Temperature:-; Capacitor Case Style:CAN; Capacitor Terminals:Quick Connect, ;RoHS Compliant: Yes |
| MR2/420B 2UF/440VAC | 制造商:LCR CAPACITORS (EU) Ltd 功能描述:CAPACITOR 2UF 440VAC |
發(fā)布緊急采購，3分鐘左右您將得到回復。