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參數(shù)資料
| 型號： | MR18R1628EG0-CT9 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Key Timing Parameters |
| 中文描述： | 關(guān)鍵的定時參數(shù) |
| 文件頁數(shù)： | 2/16頁 |
| 文件大小： | 442K |
| 代理商： | MR18R1628EG0-CT9 |
Page 1
Version 1.0 May 2004
MR16R1624(8/G)EG0
MR18R1624(8/G)EG0
Overview
The RIMM
module is a general purpose high- performance
memory module suitable for use in a broad range of applica-
tions including computer memory, personal computers,
workstations and other applications where high bandwidth
and low latency are required.
The RIMM module consists of 256/288Mb RDRAM
devices. These are extremely high-speed CMOS DRAMs
organized as 16M words by 16 or 18 bits. The use of
Rambus Signaling Level (RSL) technology permits up to
1066 MHz transfer rates while using conventional system
and board design technologies. RDRAM
devices are
capable of sustained data transfers at 0.94 ns per two bytes
(7.5ns per 16 bytes).
The RDRAM architecture enables the highest sustained
bandwidth for multiple, simultaneous, randomly addressed,
memory transactions. The separate control and data buses
with independent row and column control yield over 95%
bus efficiency. The RDRAM device's 32-bank architecture
supports up to four simultaneous transactions per device.
Features
High speed up to 1066 MHz RDRAM storage
184 edge connector pads with 1mm pad spacing
Module PCB size : 133.35mm x 31.75mm x 1.27mm
(5.25
”
x 1.25
”
x 0.05
”
) - 256Mb and 288Mb base PC800
RIMM Module
Module PCB size : 133.35mm x 34.93mm x 1.27mm
(5.25
”
x 1.375
”
x 0.05
”
) - 256Mb and 288Mb base
PC1066 RIMM Module
Each RDRAM device has 32 banks, for a total of 512, 256,
128 banks on each 512/576MB, 256/288MB, 128/144MB
module respectively
Gold plated edge connector pad contacts
Serial Presence Detect(SPD) support
Operates from a 2.5 volt supply (±5%)
Powerdown self refresh modes
Separate Row and Column buses for higher efficiency
WBGA lead free package (92/84 balls)
Key Timing Parameters/Part Numbers
The following table lists the frequency and latency bins
available for RIMM modules.
Table 1: Part Number by Freq. & Latency
Form Factor
The RIMM modules are offered in 184-pad 1mm edge
connector pad pitch suitable for 184 contact RIMM connec-
tors. Figure 1 below, shows a sixteen device RIMM module.
Organization
Speed
Part Number
Bin
I/O
Freq.
(MHz)
t
RAC
(Row
Access
Time) ns
64M x 16/18
-CT9
1066
32P
MR16/18R1624EG0-CT9
-CM8
800
40
MR16/18R1624EG0-CM8
-CK8
800
45
MR16/18R1624EG0-CK8
128M x 16/18
-CT9
1066
32P
MR16/18R1628EG0-CT9
-CM8
800
40
MR16/18R1628EG0-CM8
-CK8
800
45
MR16/18R1628EG0-CK8
256M x 16/18
-CT9
1066
32P
MR16/18R162GEG0-CT9
-CM8
800
40
MR16/18R162GEG0-CM8
-CK8
800
45
MR16/18R162GEG0-CK8
Figure 1: RIMM Module shown with heat spreader removed
Note: On double sided modules, RDRAM devices are also installed on bottom side of PCB.
(16Mx16)*4(8/16)pcs RIMM
Module based on 256Mb E-die, 32s banks,16K/32ms Ref, 2.5V
(16Mx18)*4(8/16)pcs RIMM
Module based on 288Mb E-die, 32s banks,16K/32ms Ref, 2.5V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MR18R162GAF0-CK8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V |
| MR18R162GAF0-CM8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V |
| MR18R162GAF0-CN9 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V |
| MR18R162GAF0-CT9 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V |
| MR18R162GEG0-CK8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Key Timing Parameters |
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