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參數(shù)資料
| 型號： | MR18R16248EG0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Key Timing Parameters |
| 中文描述： | 關(guān)鍵的定時參數(shù) |
| 文件頁數(shù)： | 8/16頁 |
| 文件大?。?/td> | 442K |
| 代理商： | MR18R16248EG0 |
Page 7
Version 1.0 May 2004
MR16R1624(8/G)EG0
MR18R1624(8/G)EG0
RIMM Module Current Profile
Table 7: RIMM Module Current Profile
I
DD
RIMM Module Capacity
512/576MB
256/288MB
128/144MB
Unit
Number of 256/288Mb RDRAM devices
16
8
4
RIMM Module power conditions
a
Freq
Max
Max
Max
I
DD1
One RDRAM device in Read
b
, bal-
ance in NAP mode
-1066
760/810
c
728/778
712/762
mA
-800
620/660
588/628
572/612
I
DD2
One RDRAM device in Read
b
, bal-
ance in Standby mode
-1066
2275/2325
1435/1485
1015/1065
mA
-800
1985/2025
1225/1265
845/885
I
DD3
One RDRAM device in Read
b
, bal-
ance in Active mode
-1066
3100/3150
1820/1870
1180/1230
mA
-800
2585/2625
1505/1545
965/1005
I
DD4
One RDRAM device in Write, bal-
ance in NAP mode
-1066
750/800
718/768
702/752
mA
-800
605/640
573/608
557/592
I
DD5
One RDRAM device in Write, bal-
ance in Standby mode
-1066
2265/2315
1425/1475
1005/1055
mA
-800
1970/2005
1210/1245
830/865
I
DD6
One RDRAM device in Write, bal-
ance in Active mode
-1066
3090/3140
1810/1860
1170/1220
mA
-800
2570/2605
1490/1525
950/985
a. Actual power will depend on memory controller and usage patterns. Power does not include Refresh
Current.
b. I/O current is a function of the % of 1
’
s, to add I/O power for 50% 1
’
s for a X16 need to add 257mA or 290mA for X18 ECC module for the following:
V
DD
= 2.5V, V
TERM
= 1.8V, V
REF
= 1.4V and V
DIL
= V
REF
- 0.5V.
c. Current values represent X16(Non-Ecc) / X18(Ecc)
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| MR18R1624EG0-CK8 | Key Timing Parameters |
| MR18R162GEG0-CK8 | Key Timing Parameters |
| MR18R162GEG0-CT9 | Key Timing Parameters |
| MR18R1624EG0-CM8 | CONN HEADER 18POS DL PCB 30GOLD |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MR18R1624AF0-CK8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V |
| MR18R1624AF0-CM8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V |
| MR18R1624AF1-CN9 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V |
| MR18R1624AF1-CT9 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V |
| MR18R1624EG0-CK8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Key Timing Parameters |
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