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參數(shù)資料
| 型號： | MR0A16ACYS35 |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| 中文描述： | 256K x 16位的3.3V異步磁阻隨機存取內存 |
| 文件頁數(shù)： | 1/22頁 |
| 文件大?。?/td> | 154K |
| 代理商： | MR0A16ACYS35 |
Freescale Semiconductor, Inc., 2004, 2006, 2007. All rights reserved.
Freescale Semiconductor
Data Sheet
Document Number: MR2A16A
Rev. 4, 6/2007
Introduction
TheMR2A16Aisa4,194,304-bitmagnetoresistive
random access memory (MRAM) device
organized as 262,144 words of 16 bits. The
MR2A16A is equipped with chip enable (E), write
enable (W), and output enable (G) pins, allowing
for significant system design flexibility without bus
contention. Because the MR2A16A has separate
byte-enable controls (LB and UB), individual bytes
can be written and read.
MRAM is a nonvolatile memory technology that
protects data in the event of power loss and does
not require periodic refreshing. The MR2A16A is
the ideal memory solution for applications that
must permanently store and retrieve critical data
quickly.
The MR2A16A is available in a 400-mil, 44-lead
plastic small-outline TSOP type-II package with an
industry-standardcenterpowerandgroundSRAM
pinout.
The MR2A16A is available in Commercial (0C to
70C), Industrial (
-
40C to 85C) and Extended
(
-
40C to 105C) ambient temperature ranges.
Features
Single 3.3-V power supply
Commercial temperature range (0C to
70C), Industrial temperature range (
-
40C
to 85C) and Extended temperature range
(
-
40C to 105C)
Symmetrical
high-speed read and write with
fast access time (35 ns)
Flexible data bus control — 8 bit or 16 bit
access
Equal address and chip-enable access
times
Automatic data protection with low-voltage
inhibit circuitry to prevent writes on power
loss
All inputs and outputs are
transistor-transistor logic (TTL) compatible
Fully static operation
Full nonvolatile operation with 20 years
minimum data retention
256K x 16-Bit 3.3-V
Asynchronous
Magnetoresistive RAM
MR2A16A
44-TSOP
Case 924A-02
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| MR0S08ACTS35C | 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
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| MR0S08AVTS35C | 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MR0A16ACYS35R | 功能描述:NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| MR0A16AMA35 | 功能描述:NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| MR0A16AMA35R | 功能描述:NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| MR0A16AMYS35 | 制造商:Everspin Technologies 功能描述:IC MRAM 1MBIT 35NS 44TSOP |
| MR0A16AMYS35R | 制造商:Everspin Technologies 功能描述:IC MRAM 1MBIT 35NS 44TSOP |
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