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參數(shù)資料
| 型號： | MPSW51 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | One Watt High Current Transistors(PNP Silicon) |
| 中文描述： | 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | CASE 29-10, TO-226AE, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 123K |
| 代理商： | MPSW51 |
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –10 mAdc, VCE = –1.0 Vdc)
(IC = –100 mAdc, VCE = –1.0 Vdc)
(IC = –1000 mAdc, VCE = –1.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = –1000 mAdc, IB = –100 mAdc)
hFE
55
60
50
—
—
—
—
VCE(sat)
—
–0.7
Vdc
Base–Emitter On Voltage
(IC = –1000 mAdc, VCE = –1.0 Vdc)
SMALL–SIGNAL CHARACTERISTICS
VBE(on)
—
–1.2
Vdc
Current–Gain – Bandwidth Product
(IC = –50 mAdc, VCE = –10 Vdc, f = 20 MHz)
fT
50
—
MHz
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
30
pF
Figure 1. DC Current Gain
Figure 2. Collector Saturation Region
Figure 3. “ON” Voltages
Figure 4. Temperature Coefficient
–1000
–10
IC, COLLECTOR CURRENT (mA)
200
100
70
IB, BASE CURRENT (mA)
–5.0
–50
–0.6
–0.2
0
–100
–500
–1.0
IC, COLLECTOR CURRENT (mA)
0
–1.0
–0.8
–0.6
–0.4
–0.2
IC, COLLECTOR CURRENT (mA)
–0.8
–1.2
–1.6
–2.0
–2.4
–2.8
–200
h
,
V
V
50
20
–100
–20
–50
–200
–500
–10 –20
–0.05 –0.1 –0.2
–2.0
–0.4
–0.8
–1.0
–2.0
–5.0
–10
–20
–50
TJ = 25
°
C
VBE(SAT) @ IC/IB = 10
–0.01
–0.5 –1.0
–0.02
–100
–1000
–100
–500
–1.0
–200
–2.0
–5.0
–10
–20
–50
VB for VBE
–1000
V
B
°
,
VCE = –1.0 V
TJ = 25
°
C
VCE(SAT) @ IC/IB = 10
VBE(ON) @ VCE = –1.0 V
TJ = 25
°
C
IC =
–100
mA
IC =
–50 mA
IC =
–1000 mA
IC =
–10 mA
IC =
–500 mA
IC =
–250
mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPSW51_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:One Watt High Current Transistors |
| MPSW51A | 功能描述:兩極晶體管 - BJT 1A 50V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW51AG | 功能描述:兩極晶體管 - BJT 1A 50V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW51ARLRA | 功能描述:兩極晶體管 - BJT 1A 50V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW51ARLRAG | 功能描述:兩極晶體管 - BJT 1A 50V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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