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參數(shù)資料
| 型號： | MPSA05 |
| 廠商： | Transys Electronics Ltd. |
| 英文描述： | 150000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| 中文描述： | npn型小信號晶體管 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 239K |
| 代理商： | MPSA05 |
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 14. MPSA05/06 Collector Saturation
Region
Figure 15. MPSA55/56 Collector Saturation
Region
Figure 16. MPSA05/06 Base–Emitter
Temperature Coefficient
Figure 17. MPSA55/56 Base–Emitter
Temperature Coefficient
100
500
0.5
IC, COLLECTOR CURRENT (mA)
–0.8
–1.2
–1.6
–2.0
–2.4
–2.8
IC, COLLECTOR CURRENT (mA)
0.1
10
0.05
IC, COLLECTOR CURRENT (mA)
1.0
0.8
0.6
0.4
0.2
0
IB, BASE CURRENT (mA)
1.0
TJ = 25
°
C
R
NPN
PNP
10
RVB for VBE
°
R
°
50
IC =
100 mA
IC =
50 mA
IC =
250 mA
IC =
500 mA
IC =
10 mA
,
V
,
V
1.0
2.0
5.0
20
50
200
20
2.0
5.0
0.2
0.5
–100
–500
–0.5
–0.8
–1.2
–1.6
–2.0
–2.4
–2.8
–10
RVB for VBE
–1.0
–2.0
–5.0
–20
–50
–200
–0.1
–10
–0.05
–1.0
–0.8
–0.6
–0.4
–0.2
0
–1.0
TJ = 25
°
C
–50
IC =
–100 mA
IC =
–50 mA
IC =
–250 mA
IC =
–500 mA
IC =
–10 mA
–20
–2.0
–5.0
–0.2
–0.5
Figure 18. MPSA05, MPSA06, MPSA55 and MPSA56 Thermal Response
t, TIME (ms)
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k
2.0 k
5.0 k
10 k
20 k
50 k
100 k
0.03
0.02
0.1
0.07
0.05
0.01
0.3
0.2
1.0
0.7
0.5
r
T
Z
θ
JC(t) = r(t)
R
θ
JC
TJ(pk) – TC = P(pk) Z
θ
JC(t)
Z
θ
JA(t) = r(t)
R
θ
JA
TJ(pk) – TA = P(pk) Z
θ
JA(t)
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t1
(SEE AN469)
t1
t2
DUTY CYCLE, D = t1/t2
P(pk)
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
SINGLE PULSE
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|---|---|
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| MPSA05_D26Z | 功能描述:兩極晶體管 - BJT NPN Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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