參數(shù)資料
型號： MPS6652RLRP
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： Amplifier Transistors
中文描述： 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝： CASE 29-11, TO-226, 3 PIN
文件頁數(shù)： 1/8頁
文件大?。?/td> 87K
代理商： MPS6652RLRP
Semiconductor Components Industries, LLC, 2006
June, 2006 Rev. 4
1
Publication Order Number:
MPS6601/D
MPS6601, MPS6602 (NPN)
MPS6651, MPS6652 (PNP)
MPS6602 and MPS6652 are Preferred Devices
Amplifier Transistors
Features
Voltage and Current are Negative for PNP Transistors
PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
MPS6601/6651
MPS6602/6652
V
CEO
25
40
Vdc
CollectorBase Voltage
MPS6601/6651
MPS6602/6652
V
CBO
25
30
Vdc
EmitterBase Voltage
V
EBO
4.0
Vdc
Collector Current Continuous
I
C
1000
mAdc
Total Device Dissipation @ T
A
= 25
°
C
Derate above 25
°
C
P
D
625
5.0
W
mW/
°
C
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
1.5
12
W
mW/
°
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient
(Note 1)
R
JA
200
°
C/W
Thermal Resistance, JunctiontoCase
R
JC
83.3
°
C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. R
JA
is measured with the device soldered into a typical printed circuit board.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
MPS66xy = Device Code
x = 0 or 5
y = 1 or 2
A
= Assembly Location
Y
= Year
WW
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
Preferred
devices are recommended choices for future use
and best overall value.
TO92
CASE 2911
STYLE 1
1
23
MARKING DIAGRAM
MPS
66xy
AYWW
COLLECTOR
3
2
BASE
1
EMITTER
COLLECTOR
3
2
BASE
1
EMITTER
NPN
PNP
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
相關PDF資料
PDF描述
MPS6652RLRPG Amplifier Transistors
MPS6601G Amplifier Transistors
MPS6601RLRA Amplifier Transistors
MPS6601RLRAG Amplifier Transistors
MPS6602G Amplifier Transistors
相關代理商/技術參數(shù)
參數(shù)描述
MPS6652RLRPG 功能描述:TRANS PNP GP BIPO 40V TO-92 RoHS:是 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
MPS66R-5000 功能描述:以太網(wǎng)和電信連接器 6P6C SHIELDED SOLID ROUND 50u RoHS:否 制造商:Pulse 產(chǎn)品:Modular Jacks 性能類別: USOC 代碼:RJ45 位置/觸點數(shù)量: 安裝風格:Through Hole 端口數(shù)量:1 x 1 型式:Female 屏蔽: 電流額定值: 電壓額定值: 觸點電鍍: 外殼材料:Thermoplastic IP 等級:
MPS66RX-1000 功能描述:以太網(wǎng)和電信連接器 MPG 6P6C SH RD SD RoHS:否 制造商:Pulse 產(chǎn)品:Modular Jacks 性能類別: USOC 代碼:RJ45 位置/觸點數(shù)量: 安裝風格:Through Hole 端口數(shù)量:1 x 1 型式:Female 屏蔽: 電流額定值: 電壓額定值: 觸點電鍍: 外殼材料:Thermoplastic IP 等級:
MPS66RX-5000 功能描述:以太網(wǎng)和電信連接器 6P6C SHIELDED SOLID ROUND 50u RoHS:否 制造商:Pulse 產(chǎn)品:Modular Jacks 性能類別: USOC 代碼:RJ45 位置/觸點數(shù)量: 安裝風格:Through Hole 端口數(shù)量:1 x 1 型式:Female 屏蔽: 電流額定值: 電壓額定值: 觸點電鍍: 外殼材料:Thermoplastic IP 等級:
MPS66X-1000 功能描述:以太網(wǎng)和電信連接器 6P6C SHIELDED RoHS:否 制造商:Pulse 產(chǎn)品:Modular Jacks 性能類別: USOC 代碼:RJ45 位置/觸點數(shù)量: 安裝風格:Through Hole 端口數(shù)量:1 x 1 型式:Female 屏蔽: 電流額定值: 電壓額定值: 觸點電鍍: 外殼材料:Thermoplastic IP 等級:
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