參數(shù)資料
型號: MPS6560RLRA
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: PLASTIC, TO-226AA, 3 PIN
文件頁數(shù): 1/33頁
文件大小: 294K
代理商: MPS6560RLRA
2–594
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Audio Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
25
Vdc
Collector – Base Voltage
VCBO
25
Vdc
Emitter – Base Voltage
VEBO
5.0
Vdc
Collector Current — Continuous
IC
500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.5
12
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA(1)
200
°C/mW
Thermal Resistance, Junction to Case
RqJC
83.3
°C/mW
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2)
(IC = 10 mAdc, IB = 0)
V(BR)CEO
25
Vdc
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
25
Vdc
Emitter – Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc
Collector Cutoff Current
(VCE = 25 Vdc, IB = 0)
ICES
100
nAdc
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
ICBO
100
nAdc
Emitter Cutoff Current
(VEB(off) = 4.0 Vdc, IC = 0)
IEBO
100
nAdc
1. RqJA is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width
v 300 ms; Duty Cycle v 2.0%.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
MPS6560
COLLECTOR
3
2
BASE
1
EMITTER
REV 1
相關(guān)PDF資料
PDF描述
MPS6560RL1 500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
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