
NPN MPS6521 PNP MPS6523
http://onsemi.com
833
PNP
MPS6523
TYPICAL NOISE CHARACTERISTICS
(VCE = –5.0 Vdc, TA = 25°C)
Figure 23. Noise Voltage
f, FREQUENCY (Hz)
5.0
7.0
10
3.0
Figure 24. Noise Current
f, FREQUENCY (Hz)
1.0
10
20
50 100
200
500 1.0k 2.0k
5.0k 10k
1.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.1
BANDWIDTH = 1.0 Hz
RS ≈ 0
IC = 10 A
100 A
e n
,NOISE
VOL
TAGE
(nV)
I n
,NOISE
CURRENT
(pA)
30 A
BANDWIDTH = 1.0 Hz
RS ≈∞
IC = 1.0 mA
300 A
100 A
30 A
10 A
10
20
50
100 200
500
1.0k 2.0k
5.0k 10k
2.0 1.0 mA
0.2
300 A
NOISE FIGURE CONTOURS
(VCE = –5.0 Vdc, TA = 25°C)
500k
100
200
500
1.0k
10k
5.0k
20k
50k
100k
200k
2.0k
1.0M
500k
100
200
500
1.0k
10k
5.0k
20k
50k
100k
200k
2.0k
1.0M
Figure 25. Narrow Band, 100 Hz
IC, COLLECTOR CURRENT (A)
Figure 26. Narrow Band, 1.0 kHz
IC, COLLECTOR CURRENT (A)
10
0.5 dB
BANDWIDTH = 1.0 Hz
R S
,SOURCE
RESIST
ANCE
(OHMS)
R S
,SOURCE
RESIST
ANCE
(OHMS)
Figure 27. Wideband
IC, COLLECTOR CURRENT (A)
10
10 Hz to 15.7 kHz
R S
,SOURCE
RESIST
ANCE
(OHMS)
Noise Figure is Defined as:
NF
+ 20 log10
en2 ) 4KTRS ) In
2RS2
4KTRS
1 2
= Noise Voltage of the Transistor referred to the input. (Figure 3)
= Noise Current of the Transistor referred to the input. (Figure 4)
= Boltzman’s Constant (1.38 x 10–23 j/
°K)
= Temperature of the Source Resistance (
°K)
= Source Resistance (Ohms)
en
In
K
T
RS
1.0 dB
2.0 dB
3.0 dB
20 30
50 70 100
200 300
500 700 1.0k
10
20 30
50 70 100
200 300
500 700 1.0k
500k
100
200
500
1.0k
10k
5.0k
20k
50k
100k
200k
2.0k
1.0M
20 30
50 70 100
200 300
500 700 1.0k
BANDWIDTH = 1.0 Hz
5.0 dB
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB