參數(shù)資料
型號: MPS6521RL1
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 100 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: TO-226AA, 3 PIN
文件頁數(shù): 1/11頁
文件大?。?/td> 480K
代理商: MPS6521RL1
Amplifier Transistors
MAXIMUM RATINGS
Rating
Symbol
NPN
PNP
Unit
Collector–Emitter Voltage
MPS6521
MPS6523
VCEO
25
25
Vdc
Collector–Base Voltage
MPS6521
MPS6523
VCBO
40
25
Vdc
Emitter–Base Voltage
VEBO
4.0
Vdc
Collector Current — Continuous
IC
100
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.5
12
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
(Printed Circuit Board Mounting)
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 0.5 mAdc, IB = 0)
V(BR)CEO
25
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
4.0
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
MPS6521
(VCB = 20 Vdc, IE = 0)
MPS6523
ICBO
0.05
mAdc
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 1
826
Publication Order Number:
MPS6521/D
NPN
MPS6521
PNP
MPS6523
*ON Semiconductor Preferred Device
CASE 29–11, STYLE 1
TO–92 (TO–226AA)
1
2
3
*
Voltage and current are negative
for PNP transistors
COLLECTOR 3
2
BASE
1 EMITTER
COLLECTOR 3
2
BASE
1 EMITTER
相關(guān)PDF資料
PDF描述
MPS6523RL 100 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6523RLRE 100 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6523ZL1 100 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6521RL 100 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6523RLRM 100 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MPS6521RLRA 功能描述:兩極晶體管 - BJT 100mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPS6521RLRAG 功能描述:兩極晶體管 - BJT 100mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPS6522 功能描述:兩極晶體管 - BJT PNP Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPS6523 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPS6523_01 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP General Purpose Amplifier