參數(shù)資料
型號(hào)： MPS4250RLRA
廠商： ON SEMICONDUCTOR
元件分類： 小信號(hào)晶體管
英文描述： 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝： PLASTIC, TO-226AA, 3 PIN
文件頁(yè)數(shù)： 17/33頁(yè)
文件大小： 293K
代理商： MPS4250RLRA
9–13
Reliability and Quality Assurance
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Table 1–2 – Time Dependent Failure Mechanisms in Semiconductor Devices
(Applicable to Discrete and Integrated Circuits)
Device
Association
Process
Relevant
Factors
Accelerating
Factors
Typical
Activation
Energy in eV
Model
Reference
Silicon Oxide
Silicon–Silicon
Oxide Interface
Metallization
Bond and Other
Mechanical Interfaces
Various Water Fab,
Assembly, and
Silicon Defects
Surface Charges
Inversion, Accumulation
Oxide Pinholes
Dielectric Breakdown
(TDDB)
Charge Loss
Electromigration
Corrosion
Chemical
Galvanic
Electrolytic
Intermetallic
Growth
Metal Scratches
Mask Defects, etc.
Silicon Defects
Mobile Ions
E/V, T
E, T
T, J
Grain Size
Doping
Contamination
T, Impurities
Bond Strength
T, V
E, T
J, T
H, E/V, T
T
T, V
1.0
0.7–1.0 (Bipolar)
1.0 (Bipolar)
0.3–0.4 (MOS)
0.3 (MOS)
0.8 (MOS)
EPROM
1.0 Large grain Al
(glassivated)
0.5
Small grain Al
0.7 Cu–Al/Cu–Si–Al
(sputtered)
0.6–0.7
(for electrolysis)
E/V may have
thresholds
1.0 (Au/Al)
0.5–0.7 eV
0.5 eV
Fitch, et al.
Peck
1984 WRS
Hokari, et al.
Domangue, et al.
Crook, D.L.
Gear, G.
Nanda, et al.
Black, J.R.
Lycoudes, N.E.
Fitch, W.T
Howes, et al.
MMPD
1A
2
18
5
3
4
11
6
7
12
8
9
10
13
V = voltage; E = electric field; T = temperature; J = current density; H = humidity
NO. REFERENCE
1A
1.0 eV activation for leakage type failures.
Fitch, W.T.; Greer, P.; Lycoudes, N.; ‘‘Data to Support 0.001%/1000
Hours for Plastic I/C’s.’’ Case study on linear product shows 0.914 eV
activation energy which is within experimental error of 0.9 to 1.3 eV
activation energies for reversible leakage (inversion) failures reported
in the literature.
1B
0.7 To 1.0 eV for oxide defect failures for bipolar structures. This is
under investigation subsequent to information obtained from 1984
Wafer Reliability Symposium, especially for bipolar capacitors with
silicon nitride as dielectric.
2
1.0 eV activation for leakage type failures.
Peck, D.S.; ‘‘New Concerns About Integrated Circuit Reliability’’ 1978
Reliability Physics Symposium.
3
0.36 eV for dielectric breakdown for MOS gate structures.
Domangue, E.; Rivera, R.; Shedard, C.; ‘‘Reliability Prediction Using
Large MOS Capacitors’’, 1984 Reliability Physics Symposium.
4
0.3 eV for dielectric breakdown.
Crook, D.L.; ‘‘Method of Determining Reliability Screens for Time
Dependent Dielectric Breakdown’’, 1979 Reliability Physics
Symposium.
5
1.0 eV for dielectric breakdown.
Hokari, Y.; et al.; IEDM Technical Digest, 1982.
6
1.0 eV for large grain Al–Si (compared to line width).
Nanda, Vangard, Gj–P; Black, J.R.; ‘‘Electromigration of Al–Si Alloy
Films’’, 1978 Reliability Physics Symposium.
7
0.5 eV Al, 0.7 eV Cu–Al small grain (compared to line width).
Black, J.R.; ‘‘Current Limitation of Thin Film Conductor’’ 1982 Reli-
ability Physics Symposium.
8
0.65 eV for corrosion mechanism.
Lycoudes, N.E.; ‘‘The Reliability of Plastic Microcircuits in Moist
Environments’’, 1978 Solid State Technology.
9
1.0 eV for open wires or high resistance bonds at the pad bond
due to Au–Al intermetallics.
Fitch, W.T.; ‘‘Operating Life vs Junction Temperatures for Plastic
Encapsulated I/C (1.5 mil Au wire)’’, unpublished report.
10
0.7 eV for assembly related defects.
Howes, M.G.; Morgan, D.V.; ‘‘Reliability and Degradation, Semi-
conductor Devices and CIrcuits’’ John Wiley and Sons, 1981.
11
Gear, G.; ‘‘FAMOUS PROM Reliability Studies’’, 1976 Reliability
Physics Symposium.
12
Black, J.R.: unpublished report.
13
Motorola Memory Products Division; unpublished report.
相關(guān)PDF資料
PDF描述
MPS4250RL1 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6428ZL1 200 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6428RL 200 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6428RLRE 200 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS6428RL1 200 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MPS430P112 WAF 制造商:Texas Instruments 功能描述:
MPS430P112IDW 制造商:Texas Instruments 功能描述:
MPS4354 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | TO-92
MPS4355 制造商:NTE Electronics 功能描述:TRANSISTOR BIPOLAR PNP 80V 制造商:NTE Electronics 功能描述:TRANSISTOR, BIPOLAR, PNP, 80V, 800mA, TO 制造商:NTE Electronics 功能描述:TRANSISTOR, BIPOLAR, PNP, 80V, 800mA, TO-92-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:625mW; DC Collector Current:800mA; DC Current Gain hFE:50; Operating Temperature Min:-55C ;RoHS Compliant: Yes
MPS4356 制造商:NTE Electronics 功能描述:T-PNP SI- AUDIO AMP
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*