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| 型號(hào)： | MPS2907AZL1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, TO-226AA, 3 PIN |
| 文件頁(yè)數(shù)： | 12/35頁(yè) |
| 文件大?。?/td> | 385K |
| 代理商： | MPS2907AZL1 |
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MPS2907 MPS2907A
2–543
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –0.1 mAdc, VCE = –10 Vdc)
MPS2907
MPS2907A
(IC = –1.0 mAdc, VCE = –10 Vdc)
MPS2907
MPS2907A
(IC = –10 mAdc, VCE = –10 Vdc)
MPS2907
MPS2907A
(IC = –150 mAdc, VCE = –10 Vdc)(1)
MPS2907, MPS2907A
(IC = –500 mAdc, VCE = –10 Vdc)(1)
MPS2907
MPS2907A
hFE
35
75
50
100
75
100
30
50
—
300
—
Collector – Emitter Saturation Voltage(1)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
VCE(sat)
—
–0.4
–1.6
Vdc
Base – Emitter Saturation Voltage(1)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
VBE(sat)
—
–1.3
–2.6
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(1), (2)
(IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz)
fT
200
—
MHz
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
8.0
pF
Input Capacitance
(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
—
30
pF
SWITCHING CHARACTERISTICS
Turn–On Time
(VCC = –30 Vdc, IC = –150 mAdc,
I
15
Ad ) (Fi
1
d 5)
ton
—
45
ns
Delay Time
IB1 = –15 mAdc) (Figures 1 and 5)
td
—
10
ns
Rise Time
tr
—
40
ns
Turn–Off Time
(VCC = –6.0 Vdc, IC = –150 mAdc,
I
15
Ad ) (Fi
2)
toff
—
100
ns
Storage Time
IB1 = IB2 = 15 mAdc) (Figure 2)
ts
—
80
ns
Fall Time
tf
—
30
ns
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
0
–16 V
200 ns
50
1.0 k
200
–30 V
TO OSCILLOSCOPE
RISE TIME
≤ 5.0 ns
+15 V
–6.0 V
1.0 k
37
50
1N916
1.0 k
200 ns
–30 V
TO OSCILLOSCOPE
RISE TIME
≤ 5.0 ns
INPUT
Zo = 50
PRF = 150 PPS
RISE TIME
≤ 2.0 ns
P.W. < 200 ns
INPUT
Zo = 50
PRF = 150 PPS
RISE TIME
≤ 2.0 ns
P.W. < 200 ns
Figure 1. Delay and Rise Time Test Circuit
Figure 2. Storage and Fall Time Test Circuit
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPS2907AZL1G | 功能描述:兩極晶體管 - BJT 600mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPS2907-H | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:PNP Silicon Plastic-Encapsulate Transistor |
| MPS2907-L | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:PNP Silicon Plastic-Encapsulate Transistor |
| MPS2907RLRM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MPS2907RLRP | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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