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參數(shù)資料
| 型號： | MPS-080917N-82 |
| 廠商： | MICROWAVE TECHNOLOGY INC |
| 元件分類： | 放大器 |
| 英文描述： | 870 MHz - 925 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 10 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 134K |
| 代理商： | MPS-080917N-82 |
MPS-080917N-82
870 to 925 MHz Low Noise Receiver Amplifier
Email: info@mwtinc.com
The MPS-080917N-82 is a low noise , high dynamic range amplifier designed
for ultralinear GSM, NMT-900 and ETACS receiver applications. The circuit is
matched to 50 ohm and employs a single stage GaAs FET with internal
matching to provide exceptional noise figure, 0.8 dB combined with extremely
high IP3, +36 dBm. Typical applications are base station receivers, Tower
mounted LNA’s, smart antenna systems, picocell repeaters and receiver multi-
couplers.
Gain vs. Frequency
18
16
14
12
850 870 890 910 930 950
Frequency (MHz)
G
Very Low Noise 0.8 dB Typ.
High +36 dBm Typ. IP3
13.5 dB Typical Gain
7.5 Volt Bias
26% High Power
Added Effeciency
Features
Specifications
Electrical at 25 C, Vdd= 7.5 V, Zo= 50
Symbol Parameter Min. Typical Max Unit
Freq
SSG
P1dB
IP3
NF
VSWR
GOF
GOT
dd
PAE
Frequency Range
Small Signal Gain
P out at 1 dB Compression
Third-order Intercept
Noise Figure
Input VSWR
Gain Variation over Freq.
Gain Variation over Temp.
DC Current
Power Added Efficiency
870
12
+33
13.5
+22.0
+36.0
0.8
2.0:1
+/-0.2
- .015
180
26
925
1.0
2.5:1
+/-0.5
250
MHz
dB
dBm
dBm
dB
dB
dB/ C
mA
%
Noise Figure vs. Frequency
2.0
.5
N
850
870
890
Frequency (MHz)
Absolute Maximum Ratings
Maximum Bias Voltage
Maximum Continuous RF Input Power
Maximum Peak Input Power
Maximum Case Operating Temperature
Maximum Storage Temperature
8.0 V
950 mW
1400 mW
+85 C
-65 C to +150 C
www.mwtinc.com
4268 Solar Way Fremont California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
910
930
950
1.0
1.5
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