- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98028 > MPF910RLRM (ON SEMICONDUCTOR) 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 PDF資料下載
參數(shù)資料
| 型號(hào)： | MPF910RLRM |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | PLASTIC, TO-226AE, 3 PIN |
| 文件頁(yè)數(shù)： | 1/34頁(yè) |
| 文件大小： | 314K |
| 代理商： | MPF910RLRM |
當(dāng)前第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)
4–87
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TMOS Switching
N–Channel — Enhancement
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain – Source Voltage
VDS
60
Vdc
Gate–Source Voltage
— Continuous
— Non–repetitive (tp ≤ 50 s)
VGS
VGSM
±20
±40
Vdc
Vpk
Drain Current – Continuous(1)
– Pulsed(2)
ID
IDM
0.5
1.0
Adc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
MPF910
PD
1.0
8.0
Watts
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
MFE910
PD
6.25
50
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero–Gate–Voltage Drain Current
(VDS = 40 V, VGS = 0)
IDSS
—
0.1
10
Adc
Gate Reverse Current
(VGS = 10 V, VDS = 0)
IGSS
—
0.01
10
nAdc
Drain–Source Breakdown Voltage
(VGS = 0, ID = 100 A)
V(BR)DSS
60
90
—
Vdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mA)
VGS(th)
0.3
1.5
2.5
Vdc
Drain–Source On–Voltage
(VGS = 10 V, ID = 500 mA)
VDS(on)
—
2.5
Vdc
On–State Drain Current
(VDS = 25 V, VGS = 10 V)
ID(on)
500
—
mA
Forward Transconductance
(VDS = 15 V, ID = 500 mA)
gfs
100
—
mmhos
1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width
v 300 s, Duty Cycle v 2.0%.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MPF910
CASE 29–05, STYLE 22
TO–92 (TO–226AE)
1
2
3
3 DRAIN
1 SOURCE
2
GATE
REV 1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MPF910RL1 | 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| MPF910RLRE | 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| MPF910RLRA | 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| MPF910RL | 500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| MPF990RL1 | 2000 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPF920 | 制造商:Sony Nec Optiarc America 功能描述:NCNR BOND FOR HOLOGIC - Bulk |
| MPF920/Z/121 | 制造商:Sony Nec Optiarc America 功能描述:1.44 MB FDD, BLACK BEZEL,ROHS - Bulk |
| MPF920-1 | 制造商:SOLTE 功能描述: |
| MPF920-1/121 | 制造商:Sony Semiconductor Solutions Division 功能描述:DRIVE; FLPY; 1.44MB; BLACK |
| MPF920-1/131 | 制造商:Sony Semiconductor Solutions Division 功能描述:DRIVE;FLPY;1.44MB;WHITE |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。