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參數(shù)資料
| 型號(hào)： | MPD8021 |
| 廠商： | Micrel Semiconductor,Inc. |
| 英文描述： | Semicustom High-Voltage Array Summary Information |
| 中文描述： | 半定制高壓陣列摘要信息 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 40K |
| 代理商： | MPD8021 |
1997
11-5
MPD8021
Ordering Information
Micrel
11
Absolute Maximum Ratings
DC Input Voltage
Negative, Any Pin (V
IL
),
Note 1
.................. V
SUB
– 0.5V
DC Input Voltage
Positive ESD Pin (V
IH
),
Note 2
........................V
+
+ 0.5V
Low-Voltage Supply Differential,
Note 3
..................+16.5V
DMOS Output Device Breakdown (BV
DSS
),
Note 4
.+110V
DMOS Drain Current
Continuous (I
D(max)
),
Note 5
....................................0.2A
Pulsed (I
D(pulse)
),
Note 6
..........................................0.5A
DMOS Gate Drive Voltage (V
GS(max)
),
Note 7
............
±
20V
Standard ESD Structure Voltage (V
ESD
),
Note 8
..........2kV
Storage Temperature (T
S
) ....................... –65
°
C to +150
°
C
General Note:
Devices are ESD protected; however, handling precau-
tions are recommended.
Note 1:
V
SUB
is the substrate bias voltage.
Note 2:
V
+
is the positive ESD clamp potential, user specificed up to
+100V.
Note 3:
Maximum voltage across low-voltage analog or digital MOS.
Note 4:
DMOS source-to-body shorted to substrate at 0V.
Note 5:
V
GS
= 15V.
Note 6:
5
μ
s pulse, 10% duty cycle.
Note 7:
Measured relative to source-to-body short.
Note 8:
Measured between any two pins.
Operating Ratings
Ambient Temperature (T
A
)....................... –55
°
C to +125
°
C
Electrical and Physical Summary
Bonding Pads.................................................................. 67
2kV ESD Pads ................................................................ 36
Die Size............................................... 0.222 in.
×
0.182 in.
CMOS Output Buffer Tiles .............................................. 12
CMOS Analog Tiles......................................................... 13
High-Power DMOS................................................12@10
Bipolar Devices
split-collector PNP....................................................... 14
NPN............................................................................. 14
zener diodes................................................................ 10
CMOS Logic Devices
NMOS ....................................................................... 354
PMOS........................................................................ 354
Resistance
P-well ...................................................................... 1M
N+............................................................................20k
polysilicon.......................................................up to 50k
Capacitance ................................................................45pF
Trimming Range......................................................... 3 bits
MPD8021-0002 Kit Part
High-Voltage Characterization Array
High-voltage NPN transistors............................................ 4
(includes matching pair)
High-voltage PNP transistor.............................................. 1
High-voltage P-channel FETs ........................................... 2
Analog and digital low-voltage MOSFETs......................... 8
Expitaxial JFET ................................................................. 1
200
and 10
high-voltage DMOS transistors................. 3
6V and 12V Zener diodes ................................................. 2
Small Schottky diode......................................................... 1
ESD input protection structures ........................................ 2
High-value resistor (100k) ................................................. 1
Low-value resistor (7.6k)................................................... 1
Low-value polysilicon resistor ........................................... 1
This device is suitable for curve tracer or bench-top characterization of
various device types included in the MPD8021 array. This device is a
supplement to the design information available in the Internet Design
Kit.
MPD8021-0001 Kit Part
High-Voltage PWM Controller
High-voltage push-pull output stages................................ 6
with CMOS to high-voltage level shifters
and crossover protection logic
High-voltage charge pump for high-side drive
with integral high-side current mirror
Bandgap reference............................................................ 1
with PTAT voltage output
(usable for thermal shutdown)
Op amp ............................................................................. 1
Comparators ..................................................................... 4
Floating logic input
Undervoltage lockout
Digital cells and miscellaneous components are not accessible from
the pins of this device.
Part Number
MIC8021-xxxx*
MIC8021-0001
MIC8021-0002
* custom part number. Package markings customer specificed.
Type
custom
kit part
kit part
Temperature Range
–55
°
C to +125
°
C
–55
°
C to +125
°
C
–55
°
C to +125
°
C
Package
customer specified
68-pin PLCC
68-pin PLCC
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