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參數(shù)資料
| 型號(hào)： | MPC5646CF0CMJ1R |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 32-BIT, FLASH, 120 MHz, MICROCONTROLLER, PBGA256 |
| 封裝： | 17 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, MAPBGA-256 |
| 文件頁(yè)數(shù)： | 76/115頁(yè) |
| 文件大?。?/td> | 783K |
| 代理商： | MPC5646CF0CMJ1R |
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Electrical Characteristics
MPC5646C Microcontroller Datasheet, Rev. 4
Preliminary—Subject to Change Without Notice
Freescale Semiconductor
63
4.11.2
Electromagnetic interference (EMI)
The product is monitored in terms of emission based on a typical application. This emission test conforms to the IEC61967-1
standard, which specifies the general conditions for EMI measurements.
4.11.3
Absolute maximum ratings (electrical sensitivity)
Based on two different tests (ESD and LU) using specific measurement methods, the product is stressed in order to determine
its performance in terms of electrical sensitivity.
4.11.3.1
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according
to each pin combination. The sample size depends on the number of supply pins in the device (3 parts (n+1) supply pin). This
test conforms to the AEC-Q100-002/-003/-011 standard.
Table 31. EMI radiated emission measurement1,2
1 EMI testing and I/O port waveforms per IEC 61967-1, -2, -4.
2 For information on conducted emission and susceptibility measurement (norm IEC 61967-4), please contact your
local marketing representative.
Symbol
C
Parameter
Conditions
Value
Unit
Min
Typ
Max
—
SR — Scan range
—
0.150
1000 MHz
fCPU SR — Operating frequency
—
120
—
MHz
VDD_LV SR — LV operating voltages
—
1.28
—
V
SEMI CC T Peak level
VDD = 5V, TA =25°C,
LQFP176 package
Test conforming to IEC 61967-2,
fOSC = 40 MHz/fCPU = 120 MHz
No PLL frequency
modulation
—
18
dBV
± 2% PLL frequency
modulation
——
143
3 All values need to be confirmed during device validation.
dBV
Table 32. ESD absolute maximum ratings1,2
1 All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated
Circuits.
2 A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification requirements. Complete DC parametric and functional testing shall be performed per applicable
device specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
Symbol
Ratings
Conditions
Class
Max value3
3 Data based on characterization results, not tested in production.
Unit
VESD(HBM) Electrostatic discharge voltage
(Human Body Model)
TA = 25 °C
conforming to AEC-Q100-002
H1C
2000
V
VESD(MM) Electrostatic discharge voltage
(Machine Model)
TA = 25 °C
conforming to AEC-Q100-003
M2
200
VESD(CDM) Electrostatic discharge voltage
(Charged Device Model)
TA = 25 °C
conforming to AEC-Q100-011
C3A
500
750 (corners)
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