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參數(shù)資料
| 型號： | MPC5607BCMG4 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | FLASH, 48 MHz, MICROCONTROLLER, PBGA208 |
| 封裝： | 17 X 17 MM, 1 MM PITCH, MO-151 AAF-1, BGA-208 |
| 文件頁數(shù)： | 64/106頁 |
| 文件大?。?/td> | 667K |
| 代理商： | MPC5607BCMG4 |
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MPC5607B Microcontroller Data Sheet, Rev. 5
Electrical characteristics
Freescale Semiconductor
60
4.11.3
Absolute maximum ratings (electrical sensitivity)
Based on two different tests (ESD and LU) using specific measurement methods, the product is stressed in order to determine
its performance in terms of electrical sensitivity.
4.11.3.1
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according
to each pin combination. The sample size depends on the number of supply pins in the device (3 parts
(n + 1) supply pin). This
test conforms to the AEC-Q100-002/-003/-011 standard.
4.11.3.2
Static latch-up (LU)
Two complementary static tests are required on six parts to assess the latch-up performance:
Table 30. EMI radiated emission measurement1,2
1 EMI testing and I/O port waveforms per IEC 61967-1, -2, -4
2 For information on conducted emission and susceptibility measurement (norm IEC 61967-4), please contact your
local marketing representative.
Symbol
C
Parameter
Conditions
Value
Unit
Min
Typ
Max
—
SR — Scan range
—
0.150
1000 MHz
fCPU
SR — Operating frequency
—
64
—
MHz
VDD_LV SR — LV operating voltages
—
1.28
—
V
SEMI
CC T Peak level
VDD = 5V, TA =25°C,
LQFP144 package
Test conforming to IEC
61967-2,
fOSC = 8 MHz/fCPU =
64 MHz
No PLL frequency
modulation
—
18
dBV
± 2% PLL frequency
modulation
—
14
dBV
Table 31. ESD absolute maximum ratings1,2
1 All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated
Circuits.
2 A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification requirements. Complete DC parametric and functional testing shall be performed per applicable
device specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
Symbol
Ratings
Conditions
Class
Max value3
3 Data based on characterization results, not tested in production
Unit
VESD(HBM) Electrostatic discharge voltage
(Human Body Model)
TA = 25 °C
conforming to AEC-Q100-002
H1C
2000
V
VESD(MM) Electrostatic discharge voltage
(Machine Model)
TA = 25 °C
conforming to AEC-Q100-003
M2
200
VESD(CDM) Electrostatic discharge voltage
(Charged Device Model)
TA = 25 °C
conforming to AEC-Q100-011
C3A
500
750 (corners)
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