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MPC5565 Microcontroller Data Sheet, Rev. 3
Revision History for the MPC5565 Data Sheet
Freescale Semiconductor
50
The following table lists the information that changed in the tables between Rev. 1.0 and 2.0.
Changed title from ‘Maximum Rating’ to ‘Maximum Ratings.’
Updated the address of Semiconductor Equipment and Materials International
3081 Zanker Rd.
San Jose, CA., 95134
(408) 943-6900
Last paragraph: Changed the first sentence FROM , , , the voltage on the pins goes to high-impedance until . . .
TO. . .the pins go to a high-impedance state until . . .
Last sentence: Changed from: ‘This ensures that the digital 1.5 V logic, which is reset by the ORed POR only and
can cause the 1.5 V supply to decrease below its specification, is reset properly.’
To: ‘This ensures that the digital 1.5 V logic, which is reset only by an ORed POR and can cause the 1.5 V supply
to decrease less than its specification, resets correctly.’
Added the following NOTE before the 324 BGA Map:
NOTE
The MPC5500 devices are pin compatible for software portability and use the primary
function names to label the pins in the BGA diagram. Although some devices do not support
all the primary functions shown in the BGA diagram, the muxed and GPIO signals on those
pins remain available. See the signals chapter in the device reference manual for the signal
muxing.
Table 29. MPC5565 Changes Between Rev. 1.0 and 2.0
Location
Description of Changes
Added footnote 7 to Spec 12 ‘Internal structures hold the input voltage less than the maximum voltage on all pads
powered by VDDE supplies, if the maximum injection current specification is met (2 mA for all pins) and VDDE is
within the operating voltage specifications.’
Table Title: Footnote 1: Deleted the last sentence: “The values in this specification reflect EMI performance with
frequency modulation (FM) turned off. For better EMI performance, enable FM.’
Changed footnote 2 from:
‘Device failure is defined as: ‘If after exposure to ESD pulses, the device no longer meets the device specification
requirements. Complete DC parametric and functional testing will be performed per applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.’
to:
Device failure is defined as: ‘If after exposure to ESD pulses, the device does not meet the device specification
requirements, which includes the complete DC parametric and functional testing at room temperature and hot
temperature.
Table 28. Text Changes Between Rev. 1.0 and 2.0 (continued)
Location
Description of Changes