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參數(shù)資料
| 型號(hào)： | MP4T324335 |
| 廠商： | M-Pulse Microwave Inc. |
| 英文描述： | Bipolar High fT Low Voltage NPN Silicon Transistors |
| 中文描述： | 雙極低壓高fT的NPN硅晶體管 |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大小： | 89K |
| 代理商： | MP4T324335 |
Bipolar High fT Low Voltage NPN Silicon Transistors
V4.00
Specification Subject to Change Without Notice
M-Pulse
Microwave____________________________________________________________________________________
5
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
MP4T3243 Series
Typical Performance Curves (Cont’d)
NOMINAL COLLECTOR-BASE
CAPACITANCE (C
OB
) vs COLLECTOR-
BASE VOLTAGE (MP4T324335)
0.4
0.5
0.6
0.7
0.8
0.9
1
1
10
COLLECTOR-BASE VOLTAGE (Volts)
C
(
NOMINAL GAIN vs COLLECTOR CURRENT
at f=1 GHz and V
CE
= 3 VOLTS
(MP4T324335)
4
5
6
7
8
9
10
11
12
13
1
10
100
COLLECTOR CURRENT (mA)
G
GTU (MAX)
|S
21E
|2
MAG
NOMINAL GAIN BANDWIDTH PRODUCT
(f
T
) vs COLLECTOR CURRENT at V
CE
= 3
and 5 VOLTS (MP4T324335)
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
1
10
100
COLLECTOR CURRENT (mA)
G
3 VOLTS
5 VOLTS
NOMINAL GAIN vs FREQUENCY at V
CE
= 3
VOLTS AND I
C
= 20 mA (MP4T324335)
0
2
4
6
8
10
12
1
10
FREQUENCY (GHz)
G
GTU (MAX)
|S
21E
|2
NOMINAL GAIN vs COLLECTOR CURRENT
AT f=2 GHz and V
CE
= 3 VOLTS
(MP4T324335)
0
1
2
3
4
5
6
7
8
9
10
1
10
100
COLLECTOR CURRENT (mA)
G
GTU (MAX)
|S
21E
|2
MAG
NOMINAL DC CURRENT GAIN (h
FE
) vs
COLLECTOR CURRENT at V
CE
= 3 VOLTS
(MP4T324335)
50
60
70
80
90
100
110
120
0
20
40
60
80
100
COLLECTOR CURRENT (mA)
D
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MP4T6310 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:3 Volt, Low Noise High fT Silicon Transistor |
| MP4T631000 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:3 Volt, Low Noise High fT Silicon Transistor |
| MP4T631033 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:3 Volt, Low Noise High fT Silicon Transistor |
| MP4T631035 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:3 Volt, Low Noise High fT Silicon Transistor |
| MP4T631039 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:3 Volt, Low Noise High fT Silicon Transistor |
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