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參數(shù)資料
| 型號： | MP4T24335 |
| 廠商： | M-Pulse Microwave Inc. |
| 英文描述： | Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors |
| 中文描述： | 硅雙極型低噪聲高fT的中等功率12伏晶體管 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 89K |
| 代理商： | MP4T24335 |
Silicon Bipolar High f
T
Low Noise Medium Power 12 Volt Transistors MP4T243 Series
V3.00
pecification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 2
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
Absolute Maximum Ratings @ 25
°
C
Parameter
Collector-Base Voltage
1
Collector-Emitter Voltage
1
Emitter-Base Voltage
1
Collector Current
1
Junction Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
T
j
Unit
Volts
Volts
Volts
mA
MP4T24300
Chip
25
12
1.5
110
200
MP4T24335
Micro-X
25
12
1.5
110
200
°
C
°
C
mW
Storage Temperature
Power Dissipation
1,3
Operating Temperature
2
1. At 25
°
C case temperature (packaged transistors) or 25
°
C mounting surface temperature (chip transistors).
2. Case or bonding surface temperature. Derate maximum power dissipation rating to zero watts at maximum operating temperature.
3. The thermal resistance of the MP4T24300 junction/case is 50
°
C/watt nominal.
T
STG
-65 to +200
-65 to +200
P
T
T
CP
1000
150
400
150
°
C
Electrical Specifications @ 25
°
C
Parameter
Gain Bandwidth Product
Condition
V
CE
= 12 volts
I
C
= 40 mA
V
CE
= 12 volts
I
C
= 40 mA
f = 1 GHz
f = 2 GHz
V
CE
= 12 volts
I
C
= 20 mA
f = 1 GHz
V
CE
= 12 volts
I
C
= 40 mA
f = 2 GHz
V
CE
= 12 volts
I
C
= 40 mA
f = 2 GHz
V
CE
= 12 volts
I
C
= 40 mA
f = 1 GHz
f = 2 GHz
Symbol
f
T
Units
GHz
MP4T24300
Chip
7 typ
MP4T24335
Micro-X
7 typ
Insertion Power Gain
|S
21E
|
2
dB
12 min
8 typ
11 min
8 typ
Noise Figure
NF
dB
3 typ
3 typ
Unilateral Gain
GTU (max)
aB
11 typ
10.5 typ
Maximum Available Gain
MAG
dB
15 typ
15 typ
Power Out at 1 dB Compression
P
1dB
dBm
24 typ
22 typ
24 typ
22 typ
相關(guān)PDF資料 |
PDF描述 |
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| MP4T3243 | Bipolar High fT Low Voltage NPN Silicon Transistors |
| MP4T324300 | Bipolar High fT Low Voltage NPN Silicon Transistors |
| MP4T324333 | Bipolar High fT Low Voltage NPN Silicon Transistors |
| MP4T324335 | Bipolar High fT Low Voltage NPN Silicon Transistors |
| MP4T631033 | 3 Volt, Low Noise High fT Silicon Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MP4T3243 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Bipolar High fT Low Voltage NPN Silicon Transistors |
| MP4T324300 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Bipolar High fT Low Voltage NPN Silicon Transistors |
| MP4T324333 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Bipolar High fT Low Voltage NPN Silicon Transistors |
| MP4T324335 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Bipolar High fT Low Voltage NPN Silicon Transistors |
| MP4T6310 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:3 Volt, Low Noise High fT Silicon Transistor |
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