參數(shù)資料
型號: MP03HBP360-16
廠商: DYNEX SEMICONDUCTOR LTD
元件分類: 晶閘管
英文描述: Dual Thyristor, Thyristor/Diode Module
中文描述: 560 A, 1600 V, SCR
封裝: MP03, 5 PIN
文件頁數(shù): 3/9頁
文件大?。?/td> 262K
代理商: MP03HBP360-16
MP03XXX360
3/9
www.dynexsemi.com
Units
mA
V/
μ
s
A/
μ
s
V
m
Test Conditions
At V
RRM
/V
DRM
, T
j
= 130
C
To 67% V
DRM
, T
j
= 130
C
From 67% V
DRM
to 600A, gate source 10V, 5
t
r
= 0.5
μ
s, T
j
= 130
C
At T
vj
= 135
C. See note 1
At T
vj
= 135
C. See note 1
Parameter
Peak reverse and off-state current
Linear rate of rise of off-state voltage
Rate of rise of on-state current
Threshold voltage
On-state slope resistance
DYNAMIC CHARACTERISTICS - THYRISTOR
Symbol
I
RRM
/I
DRM
dV/dt
dI/dt
V
T(TO)
r
T
Max.
50
1000
500
0.78
0.79
Min.
-
-
-
-
-
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
At V
DRM
T
case
= 125
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig. 5
-
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
GATE TRIGGER CHARACTERISTICS AND RATINGS
Max.
3
150
0.25
30
0.25
5
10
100
5
Units
V
mA
V
V
V
V
A
W
W
Note 1:
The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
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