參數(shù)資料
型號: MP02X175-12
廠商: Dynex Semiconductor Ltd.
英文描述: MB 8C 8#12 SKT RECP
中文描述: 相位控制雙可控硅,SCR /二極管模塊
文件頁數(shù): 3/8頁
文件大?。?/td> 114K
代理商: MP02X175-12
3/8
www.dynexsemi.com
MP02X175 Series
Units
mA
V/
μ
s
A/
μ
s
V
m
Test Conditions
At V
RRM
/V
DRM
, T
j
= 125C
To 67% V
DRM
, T
j
= 125C
From 67% V
DRM
to 500A,
Repetitive 50Hz
gate source 10V, 5
,
t
r
= 0.5
μ
s, T
j
= 125C
At T
vj
= 125C. See note 1
At T
vj
= 125C. See note 1
Parameter
Peak reverse and off-state current
Linear rate of rise of off-state voltage
Rate of rise of on-state current
Threshold voltage
On-state slope resistance
DYNAMIC CHARACTERISTICS - THYRISTOR
Symbol
I
RRM
/I
DRM
dV/dt
dI/dt
V
T(TO)
r
T
Max.
30
1000
500
1.05
0.8
Min.
-
-
-
-
-
Note 1:
The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig. 5
-
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
GATE TRIGGER CHARACTERISTICS AND RATINGS
Max.
3.0
150
0.25
30
0.25
5
10
100
5
Units
V
mA
V
V
V
V
A
W
W
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