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參數(shù)資料
| 型號： | MMVL2101T1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 變?nèi)荻O管 |
| 英文描述： | 6.8 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE |
| 封裝： | PLASTIC, SOD-323, 2 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 69K |
| 代理商： | MMVL2101T1 |
MMVL2101T1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
CT, Diode Capacitance
VR = 4.0 Vdc, f = 1.0 MHz
pF
Q, Figure of Merit
VR = 4.0 Vdc,
f = 50 MHz
TR, Tuning Ratio
C2/C30
f = 1.0 MHz
Device
Min
Nom
Max
Typ
Min
Typ
Max
MMVL2101T1
6.1
6.8
7.5
450
2.5
2.7
3.2
PARAMETER TEST METHODS
(CT = CC + CJ). CT is measured at 1.0 MHz using a ca-
pacitance bridge (Boonton Electronics Model 75A or
equivalent).
2. TR, TUNING RATIO
TR is the ratio of CT measured at 2.0 Vdc divided by CT
measured at 30 Vdc.
3. Q, FIGURE OF MERIT
Q is calculated by taking the G and C readings of an ad-
mittance bridge at the specified frequency and substitut-
ing in the following equations:
Q
+ 2pfC
G
(Boonton Electronics Model 33AS8 or equivalent). Use
Lead Length
[ 1/16”.
4. TCC, DIODE CAPACITANCE TEMPERATURE
COEFFICIENT
TCC is guaranteed by comparing CT at VR = 4.0 Vdc,
f = 1.0 MHz, TA = –65°C with CT at VR = 4.0 Vdc, f =
1.0 MHz, TA = +85°C in the following equation, which de-
fines TCC:
TCC +
CT() 85°C) – CT(–65°C)
85
) 65
106
CT(25°C)
Accuracy limited by measurement of CT to ±0.1 pF.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMVL2101T1_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Tuning Diode |
| MMVL2101T1G | 功能描述:變?nèi)荻O管 30V 6.1pF RoHS:否 制造商:Skyworks Solutions, Inc. 電容:5.2 pF 反向電壓:10 V 正向連續(xù)電流:20 mA 端接類型:SMD/SMT 封裝 / 箱體:SC-79 封裝:Reel |
| MMVL2105T1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Tuning Diode |
| MMVL2105T1G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Tuning Diode |
| MMVL229AT1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:15 VOLT VOLTAGE VARIABLE CAPACITANCE DIODE |
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