參數(shù)資料
型號： MMUN2231LT1
廠商： MOTOROLA INC
元件分類： 小信號晶體管
英文描述： NPN SILICON BIAS RESISTOR TRANSISTOR
中文描述： 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封裝： TO-236AB, 3 PIN
文件頁數(shù)： 2/12頁
文件大?。?/td> 188K
代理商： MMUN2231LT1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
ICBO
ICEO
IEBO
—
—
100
nAdc
—
—
500
nAdc
MMUN2211LT1
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
mAdc
Collector-Base Breakdown Voltage (IC = 10
μ
A, IE = 0)
Collector-Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0)
ON CHARACTERISTICS(3)
V(BR)CBO
V(BR)CEO
50
—
—
Vdc
50
—
—
Vdc
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MMUN2211LT1
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
60
100
140
140
350
350
5.0
15
30
200
150
—
—
—
—
—
—
—
—
—
—
—
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA) MMUN2230LT1/MMUN2231LT1
(IC = 10 mA, IB = 1 mA) MMUN2215LT1/MMUN2216LT1
MMUN2232LT1/MMUN2233LT1/MMUN2234LT1
VCE(sat)
—
—
0.25
Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k
)
MMUN2211LT1
MMUN2212LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2213LT1
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k
)
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k
)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k
)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k
)
VOL
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
MMUN2230LT1
MMUN2215LT1
MMUN2216LT1
MMUN2233LT1
VOH
4.9
—
—
Vdc
3. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%.
相關(guān)PDF資料
PDF描述
MMUN2232LT1 NPN SILICON BIAS RESISTOR TRANSISTOR
MMUN2234LT1 NPN SILICON BIAS RESISTOR TRANSISTOR
MMUN2233LT1 Bias Resistor Transistor
MMUN2230LT1 Bias Resistor Transistor
MMUN2214LT1 Bias Resistor Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMUN2231LT1 WAF 制造商:ON Semiconductor 功能描述:
MMUN2231LT1G 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
MMUN2231RLT1 制造商:ETL 制造商全稱:E-Tech Electronics LTD 功能描述:Bias Resistor Transistor
MMUN2232 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Bias Resistor Transistor
MMUN2232L 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 k
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