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參數(shù)資料
| 型號： | MMUN2213RLT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Bias Resistor Transistor |
| 中文描述： | 偏置電阻晶體管 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 294K |
| 代理商： | MMUN2213RLT1 |
LESHAN RADIO COMPANY, LTD.
Q2–2/8
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
=50V, I
E
= 0)
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
Symbol
Min
Typ
Max
Unit
I
CBO
I
CEO
I
EBO
-
-
-
-
-
-
-
-
-
-
-
-
-
50
50
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
-
-
nAdc
nAdc
mAdc
MMUN2211RLT1
MMUN2212RLT1
MMUN2213RLT1
MMUN2214RLT1
MMUN2215RLT1
MMUN2216RLT1
MMUN2230RLT1
MMUN2231RLT1
MMUN2232RLT1
MMUN2233RLT1
MMUN2234RLT1
Collector-Base Breakdown Voltage (I
C
=10mA, I
E
=0)
Collector-Emitter Breakdown Voltage
(3)
(I
C
=2.0mA, I
B
=0)
ON CHARACTERISTICS
(3)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
V
(BR)CBO
V
(BR)CEO
Vdc
Vdc
MMUN2211RLT1
MMUN2212RLT1
MMUN2213RLT1
MMUN2214RLT1
MMUN2215RLT1
MMUN2216RLT1
MMUN2230RLT1
MMUN2231RLT1
MMUN2232RLT1
MMUN2233RLT1
MMUN2234RLT1
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
-
60
100
140
140
350
350
5.0
15
30
200
150
-
-
-
-
-
-
-
-
-
-
-
-
Collector-Emitter Saturation Voltage (I
C
=10mA, I
E
=0.3mA)
(I
C
= 10 mA, I
B
= 5 mA) MMUN2230RLT1
(I
C
= 10 mA, I
B
= 1 mA) MMUN2215RLT1
MMUN2232RLT1
MMUN2233RLT1
Output Voltage (on)
(V
CC
=5.0V,V
B
=2.5V, R
L
=1.0k
)
V
CE(sat)
0.25
Vdc
MMUN2231RLT1
MMUN2216RLT1
MMUN2234RLT1
V
OL
-
-
-
-
-
-
-
-
-
-
-
V
OH
Vdc
MMUN2211RLT1
MMUN2212RLT1
MMUN2214RLT1
MMUN2215RLT1
MMUN2216RLT1
MMUN2230RLT1
MMUN2231RLT1
MMUN2232RLT1
MMUN2233RLT1
MMUN2234RLT1
MMUN2213RLT1
-
-
-
-
-
-
-
-
-
-
-
-
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
-
(V
CC
=5.0V,V
B
=3.5V, R
L
= 1.0k
)
Output Voltage(off)(V
CC
=5.0V,V
B
=0.5V, R
L
=1.0k
)
(V
CC
=5.0V,V
B
=0.050V, R
L
=1.0k
)
(V
CC
=5.0V,V
B
=0.25V, R
L
=1.0k
)
4.9
Vdc
MMUN2230RLT1
MMUN2215RLT1
MMUN2216RLT1
MMUN2233RLT1
MMUN2211RLT1 SERIES
3. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MMUN2214 | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Bias Resistor Transistor |
| MMUN2214L | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Digital Transistors (BRT) R1 = 10 k, R2 = 47 k |
| MMUN2214LT1 | 功能描述:開關晶體管 - 偏壓電阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MMUN2214LT1G | 功能描述:開關晶體管 - 偏壓電阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MMUN2214RLT1 | 制造商:ETL 制造商全稱:E-Tech Electronics LTD 功能描述:Bias Resistor Transistor |
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