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參數(shù)資料
| 型號(hào)： | MMUN2134LT1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | PNP SILICON BIAS RESISTOR TRANSISTOR |
| 中文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大?。?/td> | 280K |
| 代理商： | MMUN2134LT1 |
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2111LT1
100
10
1
0.1
0.01
0.001
0
Vin, INPUT VOLTAGE (VOLTS)
I
TA= –25
°
C
25
°
C
1
2
3
4
5
6
7
8
9
10
0.01
20
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
V
0.1
1
0
40
60
80
1000
1
10
100
IC, COLLECTOR CURRENT (mA)
h
TA= 75
°
C
–25
°
C
100
10
75
°
C
50
0
10
20
30
40
4
3
1
2
VR, REVERSE BIAS VOLTAGE (VOLTS)
C
0
TA= –25
°
C
25
°
C
75
°
C
f = 1 MHz
lE = 0 V
TA = 25
°
C
VO = 5 V
IC/IB= 10
VCE = 10 V
0
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
0.1
V
1
10
100
10
20
30
40
50
TA= –25
°
C
25
°
C
75
°
C
VO = 0.2 V
Figure 1. Derating Curve
250
200
150
100
50
0–50
0
50
100
150
TA, AMBIENT TEMPERATURE (
°
C)
P
R
θ
JA = 625
°
C/W
Figure 3. DC Current Gain
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
25
°
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMUN2134LT1G | 功能描述:開(kāi)關(guān)晶體管 - 偏壓電阻器 100mA 50V BRT PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MMUN2134LT1G | 制造商:ON Semiconductor 功能描述:TRANSISTOR PRE-BIASED PNP 50V 22/47K |
| MMUN2134LT3 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Bias Resistor Transistors |
| MMUN2134RLT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Bias Resistor Transistor |
| MMUN2135LT1G | 制造商:ON Semiconductor 功能描述:PNP DIGITAL TRANSISTOR (B - Tape and Reel 制造商:ON Semiconductor 功能描述:Transistors Switching - Resistor Biased PNP DIGITAL TRANSISTOR |
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