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參數(shù)資料
| 型號： | MMUN2134 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Bias Resistor Transistor |
| 中文描述： | 偏置電阻晶體管 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 266K |
| 代理商： | MMUN2134 |
LESHAN RADIO COMPANY, LTD.
Q1–1/7
MAXIMUM RATINGS
(T
A
= 2
5°
C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Power Dissipation @ T
A
= 2
5°
C
(1)
Derate above 2
5°
C
THERMAL CHARACTERISTICS
Rating
Thermal Resistance — Junction-to-Ambient (surface mounted)
Operating and Storage Temperature Range
Maximum Temperature for Soldering Purposes
Time in Solder Bath
DEVICE MARKING AND RESISTOR VALUES
Device
MMUN2111LT1
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1
(2)
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
Symbol
V
CBO
V
CEO
I
C
P
D
Value
50
50
100
200
1.6
Unit
Vdc
Vdc
mAdc
mW
mW
/°
C
Symbol
R
θ
JA
T
J
, T
stg
Value
625
–65 to +150
260
10
Unit
°C/W
°C
°C
Sec
T
L
Marking
A6A
A6B
A6C
A6D
A6E
R1 (K)
10
22
47
10
10
R2 (K)
10
22
47
47
MMUN2111RLT1
MMUN2112RLT1
MMUN2113RLT1
MMUN2114RLT1
MMUN2115RLT1
MMUN2116RLT1
MMUN2130RLT1
MMUN2131RLT1
MMUN2132RLT1
MMUN2133RLT1
MMUN2134RLT1
1
3
2
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transis-
tor with a monolithic bias network consisting of two resistors; a series base resistor and a
base-emitter resistor.The BRT eliminates these individual components by integrating them
into a single device. The use of a BRT can reduce both system cost and board space. The
device is housed in the SOT-23 package which is
designed for low power surface mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SOT-23 package can be soldered using wave or
reflow. The modified gull-winged leads absorb thermal
stress during soldering eliminating the possibility of
damage to the die.
Available in 8 mm embossed tape and reel. Use the
Device Number to order the 7 inch/3000 unit reel.
Replace “T1” with “T3” in the Device Number to order
the 13 inch/10,000 unit reel
R1
R2
PIN3
Collector
(output)
PIN1
base
(Input)
PIN2
Emitter
(Ground)
8
PNP SILICON
BIAS RESISTOR
TRANSISTOR
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| MMVL2105T1 | Silicon Tuning Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMUN2134L | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Digital Transistors (BRT) R1 = 22 k, R2 = 47 k |
| MMUN2134LT1 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA 50V BRT PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MMUN2134LT1G | 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA 50V BRT PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MMUN2134LT1G | 制造商:ON Semiconductor 功能描述:TRANSISTOR PRE-BIASED PNP 50V 22/47K |
| MMUN2134LT3 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Bias Resistor Transistors |
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