參數(shù)資料
型號: MMUN2116LT1
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: PNP SILICON BIAS RESISTOR TRANSISTOR
中文描述: 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封裝: CASE 318-08, TO-236, 3 PIN
文件頁數(shù): 5/10頁
文件大?。?/td> 267K
代理商: MMUN2116LT1
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2112LT1
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
1000
10
IC, COLLECTOR CURRENT (mA)
h
100
10
1
100
TA= 75
°
C
25
°
C
–25
°
C
Figure 9. Output Capacitance
IC, COLLECTOR CURRENT (mA)
0
10
20
30
TA= –25
°
C
75
°
C
V
100
10
1
0.1
40
50
Figure 10. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.0010
1
2
3
Vin, INPUT VOLTAGE (VOLTS)
4
75
°
C
25
°
C
TA= –25
°
C
I
5
6
7
8
9
10
Figure 11. Input Voltage versus Output Current
0.01
V
0.1
1
10
40
IC, COLLECTOR CURRENT (mA)
0
20
60
80
75
°
C
25
°
C
TA= –25
°
C
50
0
10
20
30
40
4
3
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
C
25
°
C
f = 1 MHz
lE = 0 V
TA = 25
°
C
VO = 5 V
VO = 0.2 V
IC/IB= 10
VCE = 10 V
相關(guān)PDF資料
PDF描述
MMUN2131LT1 PNP SILICON BIAS RESISTOR TRANSISTOR
MMUN2132LT1 PNP SILICON BIAS RESISTOR TRANSISTOR
MMUN2133LT1 PNP SILICON BIAS RESISTOR TRANSISTOR
MMUN2112LT1 PNP SILICON BIAS RESISTOR TRANSISTOR
MMUN2113LT1 PNP SILICON BIAS RESISTOR TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMUN2116LT1G 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA 50V BRT PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
MMUN2116LT3 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Bias Resistor Transistors
MMUN2116RLT1 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Bias Resistor Transistor
MMUN2130 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Bias Resistor Transistor
MMUN2130L 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Digital Transistors (BRT) R1 = 1 k, R2 = 1 k