參數(shù)資料
型號(hào): MMUN2112LT1
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: PNP SILICON BIAS RESISTOR TRANSISTOR
中文描述: 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封裝: CASE 318-08, TO-236, 3 PIN
文件頁(yè)數(shù): 4/10頁(yè)
文件大?。?/td> 267K
代理商: MMUN2112LT1
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2111LT1
100
10
1
0.1
0.01
0.001
0
Vin, INPUT VOLTAGE (VOLTS)
I
TA= –25
°
C
25
°
C
1
2
3
4
5
6
7
8
9
10
0.01
20
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
V
0.1
1
0
40
60
80
1000
1
10
100
IC, COLLECTOR CURRENT (mA)
h
TA= 75
°
C
–25
°
C
100
10
75
°
C
50
0
10
20
30
40
4
3
1
2
VR, REVERSE BIAS VOLTAGE (VOLTS)
C
0
TA= –25
°
C
25
°
C
75
°
C
f = 1 MHz
lE = 0 V
TA = 25
°
C
VO = 5 V
IC/IB= 10
VCE = 10 V
0
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
0.1
V
1
10
100
10
20
30
40
50
TA= –25
°
C
25
°
C
75
°
C
VO = 0.2 V
Figure 1. Derating Curve
250
200
150
100
50
0–50
0
50
100
150
TA, AMBIENT TEMPERATURE (
°
C)
P
R
θ
JA = 625
°
C/W
Figure 3. DC Current Gain
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
25
°
C
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