- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383624 > MMDT2907A-7-F (DIODES INC) DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | MMDT2907A-7-F |
| 廠商： | DIODES INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 中文描述： | 600 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | GREEN, ULTRA SMALL, PLASTIC PACKAGE-6 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 94K |
| 代理商： | MMDT2907A-7-F |
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
-60
V
I
C
= -10
μ
A, I
E
= 0
I
C
= -10mA, I
B
= 0
I
E
= -10
μ
A, I
C
= 0
V
CB
= -50V, I
E
= 0
V
CB
= -50V, I
E
= 0, T
A
= 125
°
C
V
CE
= -30V, V
EB(OFF)
= -0.5V
V
CE
= -30V, V
EB(OFF)
= -0.5V
Collector-Emitter Breakdown Voltage
-60
V
Emitter-Base Breakdown Voltage
-5.0
V
Collector Cutoff Current
I
CBO
-10
nA
μ
A
Collector Cutoff Current
I
CEX
I
BL
-50
nA
Base Cutoff Current
-50
nA
ON CHARACTERISTICS (Note 3)
DC Current Gain
h
FE
75
100
100
100
50
300
I
C
= -100μA, V
CE
= -10V
I
C
= -1.0mA, V
CE
= -10V
I
C
= -10mA, V
CE
= -10V
I
C
= -150mA, V
CE
= -10V
I
C
= -500mA, V
CE
= -10V
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
Collector-Emitter Saturation Voltage
V
CE(SAT)
-0.4
-1.6
V
= -50mA
Base-Emitter Saturation Voltage
V
BE(SAT)
-1.3
-2.6
V
= 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
C
ibo
8.0
pF
V
CB
= -10V, f = 1.0MHz, I
E
= 0
V
EB
= -2.0V, f = 1.0MHz, I
C
= 0
V
CE
= -20V, I
C
= -50mA,
f = 100MHz
Input Capacitance
—
30
pF
Current Gain-Bandwidth Product
f
T
200
MHz
SWITCHING CHARACTERISTICS
Turn-On Time
t
off
t
d
t
r
t
off
t
s
t
f
45
ns
Delay Time
10
ns
Rise Time
40
ns
V
CC
= -30V, I
C
= -150mA,
I
B1
=
-15mA
Turn-Off Time
100
ns
Storage Time
80
ns
Fall Time
Notes:
30
ns
V
CC
= -6.0V, I
C
= -150mA,
I
B1
= I
B2
= -15mA
3. Short duration pulse test used to minimize self-heating effect.
200
0
50
25
50
75
100
125
150
175
200
P
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature (Total Device)
100
150
0
Note 1
C
V , REVERSE VOLTAGE (V)
Fig. 2, Typical Capacitance Characteristics
Cobo
Cibo
f = 1MHz
DS30109 Rev. 10 - 2
2 of 4
www.diodes.com
MMDT2907A
Diodes Incorporated
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMDT2907A | DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT2907A-7 | DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT3904-7-F | DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT3904S | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT3904VC | DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDT2907V | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT2907V-7 | 功能描述:兩極晶體管 - BJT PNP BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMDT2907V-7-F | 制造商:Diodes Incorporated 功能描述:TRANS GP BJT PNP 60V 0.6A 6PIN SOT-563 - Tape and Reel |
| MMDT3904 | 制造商:Lite-On Semiconductor Corporation 功能描述:NPN/NPN Multi-Chip Transistor |
| MMDT3904_06 | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。