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參數(shù)資料
| 型號： | MMDT2227M |
| 廠商： | Diodes Inc. |
| 英文描述： | COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 中文描述： | 互補NPN /進步黨小信號晶體管表面貼裝 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 346K |
| 代理商： | MMDT2227M |
Note: 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
DS30718 Rev. 4 - 2
3 of 4
MMDT2227M
www.diodes.com
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
-60
-60
-5.0
V
V
V
nA
m
A
nA
nA
I
C
= -10
m
A, I
E
= 0
I
C
= -10mA, I
B
= 0
I
E
= -10
m
A, I
C
= 0
V
CB
= -50V, I
E
= 0
V
CB
= -50V, I
E
= 0, T
A
= 125
°
C
V
CE
= -30V, V
EB(OFF)
= -0.5V
V
CE
= -30V, V
EB(OFF)
= -0.5V
Collector Cutoff Current
I
CBO
-10
Collector Cutoff Current
Base Cutoff Current
I
CEX
I
BL
-50
-50
ON CHARACTERISTICS (Note 5)
DC Current Gain
h
FE
75
100
100
100
50
300
I
C
= -100μA, V
CE
= -10V
I
C
= -1.0mA, V
CE
= -10V
I
C
= -10mA, V
CE
= -10V
I
C
= -150mA, V
CE
= -10V
I
C
= -500mA, V
CE
= -10V
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
-0.4
-1.6
-1.3
-2.6
V
Base-Emitter Saturation Voltage
V
BE(SAT)
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
C
obo
C
ibo
8.0
30
pF
pF
V
CB
= -10V, f = 1.0MHz, I
E
= 0
V
EB
= -2.0V, f = 1.0MHz, I
C
= 0
V
= -20V, I
C
= -50mA,
f = 100MHz
—
Current Gain-Bandwidth Product
f
T
200
MHz
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
t
on
t
d
t
r
t
off
t
s
t
f
45
10
40
100
80
30
ns
ns
ns
ns
ns
ns
V
CC
= -30V, I
C
= -150mA,
I
B1
= -15mA
V
CC
= -6.0V, I
= -150mA,
I
B1
= I
B2
= -15mA
Electrical Characteristics, 2907A Type (PNP)
@ T
A
= 25
°
C unless otherwise specified
Note:
5. Short duration pulse test used to minimize self-heating effect.
Month
Code
Jan
1
Feb
2
March
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Date Code Key
K27 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: S = 2005
M = Month ex: 9 = September
K27
YM
Device
Packaging
SOT-26
Shipping
3000/Tape & Reel
MMDT2227M-7
Ordering Information
(Note 6)
Year
Code
2005
S
2006
T
2007
U
2008
V
2009
W
2010
X
2011
Y
2012
Z
相關(guān)PDF資料 |
PDF描述 |
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| MMDT2227M-7 | COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
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| MMDT2907A | DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDT2227M_08 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:SURFACE MOUNT FAST SWITCHING DIODE |
| MMDT2227M-7 | 功能描述:兩極晶體管 - BJT BIPOLAR TRANSISTOR NPN/PNP SOT-26 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMDT2411 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Mini size of Discrete semiconductor elements |
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