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參數(shù)資料
| 型號(hào)： | MMDT2227M-7 |
| 廠商： | DIODES INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 中文描述： | 600 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | GREEN, PLASTIC PACKAGE-6 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 346K |
| 代理商： | MMDT2227M-7 |
DS30718 Rev. 4 - 2
2 of 4
MMDT2227M
www.diodes.com
Electrical Characteristics, 2222A Type (NPN)
@ T
A
= 25
°
C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
75
40
6.0
V
V
V
nA
m
A
nA
nA
nA
I
C
= 10
m
A, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 10
m
A, I
C
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 60V, I
E
= 0, T
A
= 150
°
C
V
CE
= 60V, V
EB(OFF)
= 3.0V
V
EB
= 3.0V, I
C
= 0
V
CE
= 60V, V
EB(OFF)
= 3.0V
Collector Cutoff Current
I
CBO
10
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
I
CEX
I
EBO
I
BL
10
10
20
ON CHARACTERISTICS (Note 4)
DC Current Gain
h
FE
35
50
75
100
40
50
35
300
I
C
= 100
m
A, V
CE
= 10V
I
C
= 1.0mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V
I
C
= 150mA, V
CE
= 10V
I
C
= 500mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V, T
A
= -55
°
C
I
C
= 150mA, V
CE
= 1.0V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
0.3
1.0
V
Base-Emitter Saturation Voltage
V
BE(SAT)
0.6
1.2
2.0
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
C
obo
C
ibo
8
pF
pF
V
CB
= 10V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
V
= 20V, I
C
= 20mA,
f = 100MHz
—
25
Current Gain-Bandwidth Product
f
T
300
MHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
t
d
t
r
t
s
t
f
10
25
225
60
ns
ns
ns
ns
V
CC
= 30V, I
= 150mA,
V
BE(off)
= - 0.5V, I
B1
= 15mA
V
CC
= 30V, I
= 150mA,
I
B1
= I
B2
= 15mA
Note:
4. Pulse test: Pulse width
￡
300
m
s, duty cycle
￡
2%.
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