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參數資料
| 型號： | MMDF2C01HDR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 5.2 A, 20 V, 0.045 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數： | 10/16頁 |
| 文件大?。?/td> | 344K |
| 代理商： | MMDF2C01HDR2 |
MMDF2C01HD
http://onsemi.com
3
Characteristic
Symbol
Polarity
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS
continued (Note 8.)
Total Gate Charge
QT
(N)
(P)
9.2
9.3
13
nC
GateSource Charge
(VDS = 10 Vdc, ID = 4.0 Adc,
VGS = 4.5 Vdc)
Q1
(N)
(P)
1.3
0.8
GateDrain Charge
(VDS = 6.0 Vdc, ID = 2.0 Adc,
VGS = 4.5 Vdc)
Q2
(N)
(P)
3.5
4.0
VGS = 4.5 Vdc)
Q3
(N)
(P)
3.0
SOURCEDRAIN DIODE CHARACTERISTICS (TC = 25°C)
Forward Voltage (Note 7.)
(IS = 4.0 Adc, VGS = 0 Vdc)
(IS = 2.0 Adc, VGS = 0 Vdc)
VSD
(N)
(P)
0.95
1.69
1.1
2.0
Vdc
Reverse Recovery Time
trr
(N)
(P)
38
48
ns
(IF = IS,
ta
(N)
(P)
17
23
(IF = IS,
dIS/dt = 100 A/s)
tb
(N)
(P)
22
25
Reverse Recovery Stored
Charge
QRR
(N)
(P)
0.028
0.05
C
6. Negative signs for PChannel device omitted for clarity.
7. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
8. Switching characteristics are independent of operating junction temperature.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMDF2C02E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.5 AMPERES 25 VOLTS |
| MMDF2C02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS |
| MMDF2C02HDR2 | 制造商:ON Semiconductor 功能描述: 制造商:Motorola Inc 功能描述: |
| MMDF2C03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS |
| MMDF2C03HDR2 | 功能描述:MOSFET 30V 2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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