參數(shù)資料
型號(hào): MMBTA20LT3
廠商: ON SEMICONDUCTOR
元件分類: 小信號(hào)晶體管
英文描述: 100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封裝: PLASTIC, CASE 318-08, 3 PIN
文件頁數(shù): 23/26頁
文件大小: 485K
代理商: MMBTA20LT3
MMBTA20LT1
2–405
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 19. Thermal Response
t, TIME (ms)
1.0
0.01
r(t)
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k 2.0 k
5.0 k 10 k
20 k
50 k 100 k
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN–569)
Z
θJA(t) = r(t) RθJA
TJ(pk) – TA = P(pk) Z
θJA(t)
t1
t2
P(pk)
FIGURE 19A
Figure 19A.
TJ, JUNCTION TEMPERATURE (°C)
104
–4
0
I C
,COLLECT
OR
CURRENT
(nA)
Figure 20.
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
400
2.0
I C
,COLLECT
OR
CURRENT
(mA)
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the model
as shown in Figure 19A. Using the model and the device thermal
response the normalized effective transient thermal resistance of
Figure 19 was calculated for various duty cycles.
To find Z
θJA(t), multiply the value obtained from Figure 19 by the
steady state value R
θJA.
Example:
The MPS3904 is dissipating 2.0 watts peak under the following
conditions:
t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2)
Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.
The peak rise in junction temperature is therefore
T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see AN–569.
The safe operating area curves indicate IC–VCE limits of the
transistor that must be observed for reliable operation. Collector load
lines for specific circuits must fall below the limits indicated by the
applicable curve.
The data of Figure 20 is based upon TJ(pk) = 150°C; TC or TA is
variable depending upon conditions. Pulse curves are valid for duty
cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from
the data in Figure 19. At high case or ambient temperatures, thermal
limitations will reduce the power that can be handled to values less
than the limitations imposed by second breakdown.
10–2
10–1
100
101
102
103
–2
0
+ 20
+ 40
+ 60
+ 80 + 100 + 120 + 140 + 160
VCC = 30 Vdc
ICEO
ICBO
AND
ICEX @ VBE(off) = 3.0 Vdc
TA = 25°C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1.0 ms
10
s
TC = 25°C
1.0 s
dc
4.0
6.0
10
20
40
60
100
200
4.0
6.0
8.0
10
20
40
TJ = 150°C
100
s
相關(guān)PDF資料
PDF描述
MMBTA56D87Z 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
MPSA56D74Z 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSA56D27Z 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSA56D26Z 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSA56J05Z 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBTA28 功能描述:達(dá)林頓晶體管 NPN Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MMBTA28 制造商:Fairchild Semiconductor Corporation 功能描述:SSOT-3 NPN:ROHS COMPLIANT
MMBTA28_Q 功能描述:達(dá)林頓晶體管 NPN Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MMBTA28-7 功能描述:達(dá)林頓晶體管 80V 300mW RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MMBTA28-7-F 功能描述:達(dá)林頓晶體管 80V 300mW RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel