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參數(shù)資料
| 型號： | MMBT3904WT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SC-70, 3 PIN |
| 文件頁數(shù)： | 1/29頁 |
| 文件大?。?/td> | 485K |
| 代理商： | MMBT3904WT3 |
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2–332
Motorola Small–Signal Transistors, FETs and Diodes Device Data
General Purpose Transistors
NPN and PNP Silicon
These transistors are designed for general purpose amplifier applications. They are
housed in the SOT–323/SC–70 which is designed for low power surface mount
applications.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
MMBT3904WT1
MMBT3906WT1
VCEO
40
–40
Vdc
Collector – Base Voltage
MMBT3904WT1
MMBT3906WT1
VCBO
60
–40
Vdc
Emitter – Base Voltage
MMBT3904WT1
MMBT3906WT1
VEBO
6.0
–5.0
Vdc
Collector Current — Continuous MMBT3904WT1
MMBT3906WT1
IC
200
–200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation(1)
TA = 25°C
PD
150
mW
Thermal Resistance, Junction to Ambient
RqJA
833
°C/W
Junction and Storage Temperature
TJ, Tstg
– 55 to +150
°C
DEVICE MARKING
MMBT3904WT1 = AM
MMBT3906WT1 = 2A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2)
(IC = 1.0 mAdc, IB = 0)
MMBT3904WT1
(IC = –1.0 mAdc, IB = 0)
MMBT3906WT1
V(BR)CEO
40
–40
—
Vdc
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
MMBT3904WT1
(IC = –10 mAdc, IE = 0)
MMBT3906WT1
V(BR)CBO
60
–40
—
Vdc
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
MMBT3904WT1
(IE = –10 mAdc, IC = 0)
MMBT3906WT1
V(BR)EBO
6.0
–5.0
—
Vdc
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
MMBT3904WT1
(VCE = –30 Vdc, VEB = –3.0 Vdc)
MMBT3906WT1
IBL
—
50
–50
nAdc
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
MMBT3904WT1
(VCE = –30 Vdc, VEB = –3.0 Vdc)
MMBT3906WT1
ICEX
—
50
–50
nAdc
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width
v 300 ms; Duty Cycle v 2.0%.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
NPN
MMBT3904WT1
PNP
MMBT3906WT1
CASE 419–02, STYLE 3
SOT–323/SC–70
GENERAL PURPOSE
AMPLIFIER TRANSISTORS
SURFACE MOUNT
1
2
3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT3906 | 功能描述:兩極晶體管 - BJT PNP General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT3906 MCC | 制造商:MCC 功能描述:General Purpose PNP SM TRANS SOT-23 制造商:MCC 功能描述:General Purpose PNP SM TRANS SOT-23 - free partial T/R at 500. |
| MMBT3906,215 | 功能描述:兩極晶體管 - BJT TRANS SW TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT3906 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR PNP SOT-23 |
| MMBT3906/E9 | 制造商:Vishay Semiconductors 功能描述:Trans GP BJT PNP 40V 0.2A 3-Pin SOT-23 T/R |
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