參數(shù)資料
型號(hào): MMBT2222ALT1
廠商: 樂(lè)山無(wú)線電股份有限公司
英文描述: General Purpose Transistors(NPN Silicon)
中文描述: 通用晶體管(NPN硅)
文件頁(yè)數(shù): 7/8頁(yè)
文件大?。?/td> 253K
代理商: MMBT2222ALT1
7
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
D
J
K
L
A
C
B S
H
G
V
3
1
2
CASE 318–08
SOT–23 (TO–236AB)
ISSUE AE
STYLE 6:
PIN 1.
BASE
EMITTER
COLLECTOR
2.
3.
DIM
A
B
C
D
G
H
J
K
L
S
V
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0180
0.0350
0.0830
0.0177
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0236
0.0401
0.0984
0.0236
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.45
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.60
1.02
2.50
0.60
MILLIMETERS
INCHES
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
相關(guān)PDF資料
PDF描述
MMBT2222AWT1 Preliminary Information General Purpose Transistors
MMBT2222LT1 General Purpose Transistors(NPN Silicon)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBT2222ALT1G 功能描述:兩極晶體管 - BJT 600mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT2222ALT1G 制造商:ON Semiconductor 功能描述:Bipolar Transistor
MMBT2222ALT1H 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述:
MMBT2222ALT1HTSA1 制造商:Infineon Technologies AG 功能描述:Trans GP BJT NPN 40V 0.6A 3-Pin SOT-23 T/R 制造商:Infineon Technologies AG 功能描述:AF TRANSISTORS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:TRANSISTOR SWITCHING NPN SOT-23
MMBT2222ALT1S 制造商:Motorola Inc 功能描述: