參數(shù)資料
型號： MMBT2222
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： NPN (GENERAL PURPOSE TRANSISTOR)
中文描述： npn型（通用晶體管）
文件頁數(shù)： 1/8頁
文件大?。?/td> 253K
代理商： MMBT2222
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
2222
2222A
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
30
40
Vdc
Collector–Base Voltage
60
75
Vdc
Emitter–Base Voltage
5.0
6.0
Vdc
Collector Current — Continuous
600
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board(1)
TA = 25
°
C
Derate above 25
°
C
PD
225
1.8
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
RJA
PD
556
°
C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25
°
C
Derate above 25
°
C
300
2.4
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
RJA
TJ, Tstg
417
°
C/W
Junction and Storage Temperature
DEVICE MARKING
–55 to +150
°
C
MMBT2222LT1 = M1B; MMBT2222ALT1 = 1P
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
MMBT2222
MMBT2222A
V(BR)CEO
30
40
—
—
Vdc
Collector–Base Breakdown Voltage (IC = 10 Adc, IE = 0)
MMBT2222
MMBT2222A
V(BR)CBO
60
75
—
—
Vdc
Emitter–Base Breakdown Voltage (IE = 10 Adc, IC = 0)
MMBT2222
MMBT2222A
V(BR)EBO
5.0
6.0
—
—
Vdc
Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
Collector Cutoff Current (VCB = 50 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0, TA = 125
°
C)
(VCB = 60 Vdc, IE = 0, TA = 125
°
C)
Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0)
Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
1. FR–5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
MMBT2222A
ICEX
ICBO
—
10
nAdc
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
—
—
—
—
0.01
0.01
10
10
μ
Adc
MMBT2222A
IEBO
IBL
—
100
nAdc
MMBT2222A
—
20
nAdc
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMBT2222LT1/D
SEMICONDUCTOR TECHNICAL DATA
1
2
3
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
*Motorola Preferred Device
COLLECTOR
3
1
BASE
2
EMITTER
相關PDF資料
PDF描述
MMBT2222ALT1G General Purpose Transistors
MMBT2222ALT3 General Purpose Transistors
MMBT2222ALT3G General Purpose Transistors
MMBT2222LT1G General Purpose Transistors
MMBT2222LT3 General Purpose Transistors
相關代理商/技術參數(shù)
參數(shù)描述
MMBT2222 制造商:Fairchild Semiconductor Corporation 功能描述:RF Bipolar Transistor
MMBT2222_07 制造商:DIOTEC 制造商全稱:Diotec Semiconductor 功能描述:Surface Mount Si-Epi-Planar Switching Transistors
MMBT2222_Q 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT2222A 功能描述:兩極晶體管 - BJT SOT-23 NPN GEN PUR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT2222A MCC 制造商:MCC 功能描述:General Purpose NPN SM TRANS SOT-23 制造商:MCC 功能描述:General Purpose NPN SM TRANS SOT-23 - free partial T/R at 500.
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