參數(shù)資料
型號: MMBR951
廠商: Motorola, Inc.
英文描述: Low Noise High-Frequency Transistor(低噪聲高頻率晶體管)
中文描述: 低噪聲高頻晶體管(低噪聲高頻率晶體管)
文件頁數(shù): 5/13頁
文件大小: 211K
代理商: MMBR951
5
MMBR951 MRF957
MOTOROLA RF DEVICE DATA
Figure 5. Typical Noise Figure and Associated
Gain versus Frequency
VCE = 6 V
IC = 5 mA
CIRCUIT — FIGURE 9
NFmn
0
1
2
3
4
5
6
24
20
16
12
8
4
00.1
0.2
0.3
0.5
1
0.7
2
5
3
f, FREQUENCY, (GHz)
N
G
MMBR951LT1
GNF
NF50
Figure 6. MMBR951LT1
|S21|2
GUmax
30
25
20
15
10
5
00.1
0.2 0.3
0.5
f, FREQUENCY (GHz)
1
0.7
2
5
3
MMBR951LT1
VCE = 8 V
IC = 30 mA
|
G
Figure 7. Typical Noise Figure versus
Collector Current
IC, COLLECTOR CURRENT (mA)
VCE = 6 V
NFmn at 1 GHz
6
5
4
3
2
1
01
2
3
5
10
7
20
50
30
N
MMBR951LT1
CIRCUIT — FIGURE 9
NFmn at 2 GHz
Figure 8. Functional Circuit Schematic (All Devices)
VBE
D.U.T.
RF INPUT
RF OUTPUT
**SLUG TUNER
**SLUG TUNER
*BIAS
NETWORK
*BIAS
NETWORK
*HP11590B
**MICROLAB/FXR
**
SF – 11N < 1 GHz
**
SF – 31IN
1 GHz
VCE = 6 Vdc
TYPICAL FORWARD INSERTION GAIN AND
MAXIMUM UNILATERAL GAIN versus FREQUENCY
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