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參數(shù)資料
| 型號： | MMBR901LT1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN Silicon High-Frequency Transistor |
| 中文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 90K |
| 代理商： | MMBR901LT1 |
MMBR901LT1, T3 MRF9011LT1
2–4
MOTOROLA RF DEVICE DATA
N
N
Figure 4. Gain and Noise Figure
versus Frequency
Figure 5. Gain and Noise Figure
versus Collector Current
Figure 6. Gain–Bandwidth Product versus
Collector Current
Figure 7. Insertion Gain versus Frequency
Figure 8. Maximum Unilateral Gain
versus Frequency
G
G
|
16
12
8
4
0
0
1
2
3
4
5
6
7
8
0
3
6
9
12
15
18
21
30
24
27
IC, COLLECTOR CURRENT (mA)
VCE = 10 Vdc
f = 1 GHz
CIRCUIT USED
—
SEE FIGURE 3
G
GNF
NF
0
0
1
2
3
4
5
0
6
12
18
30
24
IC, COLLECTOR CURRENT (mA)
VCE = 10 Vdc
Zo = 50 OHMS
32
24
16
8
00.1
40
VCE = 10 Vdc
IC = 5 mA
GNF
NF
f, FREQUENCY (GHz)
VCE = 10 Vdc
Zo = 50 OHMS
IC = 5 mA
VCE = 10 Vdc
Zo = 50 OHMS
IC = 5 mA
24
18
12
6
0
0.1
30
0.2 0.3
0.5
f, FREQUENCY (GHz)
1
2
3
40
30
20
10
00.1
50
0.2 0.3
0.5
f, FREQUENCY (GHz)
1
2
3
,
F
τ
(1 – |S11|2)(1 – |S22|2)
|S21|2
GUmax =
0.2
0.5
1
2
4
3
2
1
5
CIRCUIT USED — SEE FIGURE 3
MRF9011LT1
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PDF描述 |
|---|---|
| MMBR901LT3 | NPN Silicon High-Frequency Transistor |
| MMBR911LT1 | NPN Silicon High-Frequency Transistor |
| MMBR911 | NPN Silicon High-Frequency Transistor |
| MMBR920L | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| MMBR920 | NPN SILICON HIGH FREQUENCY TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBR901LT3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN Silicon High-Frequency Transistor |
| MMBR911 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN Silicon High-Frequency Transistor |
| MMBR911LT1 | 制造商:Freescale Semiconductor 功能描述: |
| MMBR911LT1G | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:NPN SILICON LOW NOISE, HIGH-FREQUENCY TRANSISTOR |
| MMBR920 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN SILICON HIGH FREQUENCY TRANSISTOR |
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