參數(shù)資料
型號(hào)： MMBFU310LT3
廠商： ON SEMICONDUCTOR
元件分類： 小信號(hào)晶體管
英文描述： Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB
封裝： PLASTIC, CASE 318-08, 3 PIN
文件頁(yè)數(shù)： 30/35頁(yè)
文件大?。?/td> 372K
代理商： MMBFU310LT3
MMBFU310LT1
4–189
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 12. 450 MHz IMD Evaluation Amplifier
BW (3 dB) – 36.5 MHz
ID – 10 mAdc
VDS – 20 Vdc
Device case grounded
IM test tones – f1 = 449.5 MHz, f2 = 450.5 MHz
C1 = 1–10 pF Johanson Air variable trimmer.
C2, C5 = 100 pF feed thru button capacitor.
C3, C4, C6 = 0.5–6 pF Johanson Air variable
trimmer.
L1 = 1/8
″ x 1/32″ x 1–5/8″ copper bar.
L2, L4 = Ferroxcube Vk200 choke.
L3 = 1/8
″ x 1/32″ x 1–7/8″ copper bar.
INPUT
RS = 50
C1
C2
L1
L2
VS
S
G
D
SHIELD
C3
U310
C4
VD
L3
C5
L4
C6
OUTPUT
RL = 50
Amplifier power gain and IMD products are a function of the load impedance. For the amplifier design shown above with C4 and
C6 adjusted to reflect a load to the drain resulting in a nominal power gain of 9 dB, the 3rd order intercept point (IP) value is
29 dBm. Adjusting C4, C6 to provide larger load values will result in higher gain, smaller bandwidth and lower IP values. For
example, a nominal gain of 13 dB can be achieved with an intercept point of 19 dBm.
Example of intercept point plot use:
Assume two in–band signals of –20 dBm at the amplifier input.
They will result in a 3rd order IMD signal at the output of
–90 dBm. Also, each signal level at the output will be
–11 dBm, showing an amplifier gain of 9.0 dB and an
intermodulation ratio (IMR) capability of 79 dB. The gain and
IMR values apply only for signal levels below comparison.
Figure 13. Two Tone 3rd Order Intercept Point
–20
–40
–60
–80
–100
–120
OUTPUT
POWER
PER
T
ONE
(dBm)
–120
+20
–100
–80
–60
INPUT POWER PER TONE (dBm)
0
+20
+40
–40
–20
0
3RD ORDER INTERCEPT POINT
FUNDAMENTAL OUTPUT
3RD ORDER IMD OUTPUT
U310 JFET
VDS = 20 Vdc
ID = 10 mAdc
F1 = 449.5 MHz
F2 = 450.5 MHz
相關(guān)PDF資料
PDF描述
MMBT200AD87Z 500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
MMBT200D87Z 500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
MMBT2222AWT3 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
MMBT2369AD87Z 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR
MMBT2369ALT3 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBFV170LT1G 制造商:ON Semiconductor 功能描述: 制造商:ON Semiconductor 功能描述:NFET SOT23 60V 500MA 5R
MMBFV170LT3G 制造商:ON Semiconductor 功能描述:NFET SOT23 60V 500MA 5R - Tape and Reel
MMBL4148H 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Surface Mount Switching Diode
MMBL4448H 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Surface Mount Switching Diode
MMBL914H 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SURFACE MOUNT SWITCHING DIODE
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*