參數(shù)資料
型號: MMBFJ309D87Z
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
封裝: SOT-23, 3 PIN
文件頁數(shù): 6/13頁
文件大小: 806K
代理商: MMBFJ309D87Z
5
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
V(BR)GSS
Gate-Source Breakdown Voltage
IG = - 1.0
A, VDS = 0
- 25
V
IGSS
Gate Reverse Current
VGS = - 15 V, VDS = 0
VGS = - 15 V, VDS = 0, TA =
125
°C
- 1.0
nA
A
VGS(off)
Gate-Source Cutoff Voltage
VDS = 10 V, ID = 1.0 nA
309
310
- 1.0
- 2.0
- 4.0
- 6.5
V
ON CHARACTERISTICS
IDSS
Zero-Gate Voltage Drain
Current*
VDS = 10 V, VGS = 0
309
310
12
24
30
60
mA
VGS(f)
Gate-Source Forward Voltage
VDS = 0, IG = 1.0 mA
1.0
V
SMALL SIGNAL CHARACTERISTICS
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
Re(yis)
Common-Source Input
Conductance
VDS = 10, ID = 10 mA, f = 100 MHz
309
310
0.7
0.5
mmhos
Re(yos)
Common-Source Output
Conductance
VDS = 10, ID = 10 mA, f = 100 MHz
0.25
mmhos
Gpg
Common-Gate Power Gain
VDS = 10, ID = 10 mA, f = 100 MHz
16
dB
Re(yfs)
Common-Source Forward
Transconductance
VDS = 10, ID = 10 mA, f = 100 MHz
12
mmhos
Re(yig)
Common-Gate Input Conductance VDS = 10, ID = 10 mA, f = 100 MHz
12
mmhos
gfs
Common-Source Forward
Transconductance
VDS = 10, ID = 10 mA, f = 1.0 kHz
309
310
10,000
8000
20,000
18,000
mhos
goss
Common-Source Output
Conductance
VDS = 10, ID = 10 mA, f = 1.0 kHz
150
mhos
gfg
Common-Gate Forward
Conductance
VDS = 10, ID = 10 mA, f = 1.0 kHz
309
310
13,000
12,000
mhos
gog
Common-Gate Output
Conductance
VDS = 10, ID = 10 mA, f = 1.0 kHz
309
310
100
150
mhos
Cdg
Drain-Gate Capacitance
VDS = 0, VGS = - 10 V, f = 1.0 MHz
2.0
2.5
pF
Csg
Source-Gate Capacitance
VDS = 0, VGS = - 10 V, f = 1.0 MHz
4.1
5.0
pF
NF
Noise Figure
VDS = 10 V, ID = 10 mA,
f = 450 MHz
3.0
dB
en
Equivalent Short-Circuit Input
Noise Voltage
VDS = 10 V, ID = 10 mA,
f = 100 Hz
6.0
N-Channel RF Amplifier
(continued)
nV/
√Hz
J309
/
J310
/
MMBFJ309
/
MMBFJ310
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