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| 型號： | MMBF0202PLT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | PLASTIC, CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 12/34頁 |
| 文件大小： | 356K |
| 代理商： | MMBF0202PLT3 |
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MMBF0202PLT1
3–57
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 A)
V(BR)DSS
20
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
1.0
10
Adc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
—
±100
nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
VGS(th)
1.0
1.7
2.4
Vdc
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 200 mAdc)
(VGS = 4.5 Vdc, ID = 50 mAdc)
rDS(on)
—
0.9
2.0
1.4
3.5
Ohms
Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc)
gFS
—
600
—
mMhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 5.0 V)
Ciss
—
50
—
pF
Output Capacitance
(VDS = 5.0 V)
Coss
—
45
—
Transfer Capacitance
(VDG = 5.0 V)
Crss
—
20
—
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
td(on)
—
2.5
—
ns
Rise Time
(VDD = –15 Vdc,
RL =75 ID = 200 mAdc
tr
—
1.0
—
Turn–Off Delay Time
RL = 75 , ID = 200 mAdc,
VGEN = –10 V, RG = 6.0 )
td(off)
—
16
—
Fall Time
GEN
G
tf
—
8.0
—
Gate Charge (See Figure 5)
(VDS = 16 V, VGS = 10 V,
ID = 200 mA)
QT
—
2700
—
pC
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
IS
—
0.3
A
Pulsed Current
ISM
—
0.75
Forward Voltage(2)
VSD
—
1.5
—
V
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
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