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參數(shù)資料
| 型號(hào)： | MMBD770T1 |
| 廠商： | MOTOROLA INC |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | Schottky Barrier Diodes |
| 中文描述： | SILICON, VHF-UHF BAND, MIXER DIODE |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 153K |
| 代理商： | MMBD770T1 |
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL CHARACTERISTICS
MMBD110T1
Figure 1. Reverse Leakage
TA, AMBIENT TEMPERATURE (
°
C)
Figure 2. Forward Voltage
VF, FORWARD VOLTAGE (VOLTS)
Figure 3. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Noise Figure
PLO, LOCAL OSCILLATOR POWER (mW)
C
N
,
I
,
I
0.1
0.2
0.5
1.0
2.0
5.0
10
11
10
9
8
7
6
5
4
3
2
1
0
1.0
2.0
3.0
4.0
1.0
0.9
0.8
0.7
0.6
0.3
0.4
0.5
0.6
100
10
1.0
0.1
0.7
0.8
30
40
50
60
70
80
100
1.0
0.7
0.5
130
110
120
90
0.2
0.1
0.07
0.05
0.02
0.01
Figure 5. Noise Figure Test Circuit
LOCAL
OSCILLATOR
UHF
NOISE SOURCE
H.P. 349A
NOISE
FIGURE METER
H.P. 342A
DIODE IN
TUNED
MOUNT
IF AMPLIFIER
NF = 1.5 dB
f = 30 MHz
VR = 3.0 Vdc
LOCAL OSCILLATOR FREQUENCY = 1.0 GHz
(Test Circuit Figure 5)
TA = –40
°
C
TA = 85
°
C
TA = 25
°
C
Note 1 — CC and CT are measured using a capacitance bridge
(Boonton Electronics Model 75A or equivalent).
Note 2 — Noise figure measured with diode under test in tuned
diode mount using UHF noise source and local oscil-
lator (LO) frequency of 1.0 GHz. The LO power is ad-
justed for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30
MHz, see Figure 5.
NOTES ON TESTING AND SPECIFICATIONS
MMBD110T1
MMBD110T1
MMBD110T1
MMBD110T1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBD330T1 | Schottky Barrier Diodes |
| MMBD770T1 | Schottky Barrier Diodes |
| MMBD330T1 | Schottky Barrier Diodes |
| MMBD110T1 | Schottky Barrier Diodes |
| MMBD2837LT1 | Monolithic Dual Switching Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBD770T1G | 功能描述:肖特基二極管與整流器 70V 120mW Single RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MMBD770W | 制造商:PANJIT 制造商全稱(chēng):Pan Jit International Inc. 功能描述:SURFACE MOUNT SCHOTTKY DIODES |
| MMBD770W_09 | 制造商:PANJIT 制造商全稱(chēng):Pan Jit International Inc. 功能描述:SURFACE MOUNT SCHOTTKY DIODES |
| MMBD770WS | 制造商:PANJIT 制造商全稱(chēng):Pan Jit International Inc. 功能描述:SURFACE MOUNT SCHOTTKY DIODES |
| MMBD914 | 功能描述:整流器 High Cond Ult Fst Di RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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