參數(shù)資料
型號(hào)： MMBD4148TDW
廠商： WEITRON INTERNATIONAL CO., LTD.
英文描述： Surface Mount Switching Multi-Chip Diode Array
中文描述： 表面貼裝開(kāi)關(guān)多芯片二極管陣列
文件頁(yè)數(shù)： 2/3頁(yè)
文件大?。?/td> 293K
代理商： MMBD4148TDW
WEITRON
http://www.weitron.com.tw
2/3
09-Feb-06
Characteristic
Symbol
Value
Unit
100
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
75
V
RMS Reverse Voltage
V
R(RMS)
53
V
Forward Continuous Current (Note 1)
I
FM
300
mA
Average Rectified Output Current (Note 1)
I
O
150
mA
Non-Repetitive Peak Forward Surge Current@ t = 1.0μs
@ t = 1.0s
I
FSM
2.0
1.0
A
Power Dissipation (Note 1)
P
D
200
mW
Thermal Resistant Junction to Ambient Air (Note 1)
R
θJA
625
°C/W
Operating Temperature Range
Storage Temperature Range
T
j
T
STG
+150
-55 to +150
°C
°C
@ T
A
= 25°C unless otherwise specified
Symbol
Min
Max
Unit
Reverse Breakdown Voltage (Note 2)
I
R
= 100μA
75
-
V
Forward Voltage (Note 2)
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
Reverse Current (Note 2)
V
R
= 75V
V
R
= 75V, Tj = 150°C
V
R
= 25V, Tj = 150°C
V
R
= 20V
-
-
-
-
0.715
0.855
1.0
1.25
V
-
1.0
50
30
25
μA
μA
μA
nA
Total Capacitance
V
R
= 0V, f = 1.0MHz
-
2.0
pF
-
4.0
ns
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Electrical Characteristics
Non-Repetitive Peak Reverse Voltage
Notes:1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch
V
RM
Notes:2. Short duration test pulse used to minimize self-heating effect.
Reverse Recovery Time
I
F
= I
R
=10mA, Irr=0.1 x I
R
, R
L
=100Ω
V
(BR)R
V
F
I
R
C
T
Trr
BAS16TDW
MMBD4148TDW
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